参数资料
型号: ATTINY2313A-MMHR
厂商: Atmel
文件页数: 90/172页
文件大小: 0K
描述: IC MCU AVR 2K FLASH 3X3 20QFN
产品培训模块: tinyAVR Introduction
标准包装: 1
系列: AVR® ATtiny
核心处理器: AVR
芯体尺寸: 8-位
速度: 20MHz
连通性: I²C,SPI,UART/USART
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 18
程序存储器容量: 2KB(1K x 16)
程序存储器类型: 闪存
EEPROM 大小: 128 x 8
RAM 容量: 128 x 8
电压 - 电源 (Vcc/Vdd): 1.8 V ~ 5.5 V
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 20-VFQFN 裸露焊盘
包装: 标准包装
其它名称: ATTINY2313A-MMHRDKR
24
8246B–AVR–09/11
ATtiny2313A/4313
5.4.3
EECR – EEPROM Control Register
Bits 7, 6 – Res: Reserved Bit
These bits are reserved and will always read zero.
Bits 5, 4 – EEPM1 and EEPM0: EEPROM Programming Mode Bits
The EEPROM Programming mode bits setting defines which programming action that will be
triggered when writing EEPE. It is possible to program data in one atomic operation (erase the
old value and program the new value) or to split the Erase and Write operations in two different
operations. The Programming times for the different modes are shown in Table 5-4.
When EEPE is set any write to EEPMn will be ignored.
During reset, the EEPMn bits will be reset to 0b00 unless the EEPROM is busy programming.
Bit 3 – EERIE: EEPROM Ready Interrupt Enable
Writing this bit to one enables the EEPROM Ready Interrupt. Provided the I-bit in SREG is set,
the EEPROM Ready Interrupt is triggered when non-volatile memory is ready for programming.
Writing this bit to zero disables the EEPROM Ready Interrupt.
Bit 2 – EEMPE: EEPROM Master Program Enable
The EEMPE bit determines whether writing EEPE to one will have effect or not.
When EEMPE is set and EEPE written within four clock cycles the EEPROM at the selected
address will be programmed. Hardware clears the EEMPE bit to zero after four clock cycles.
If EEMPE is zero the EEPE bit will have no effect.
Bit 1 – EEPE: EEPROM Program Enable
This is the programming enable signal of the EEPROM. The EEMPE bit must be set before
EEPE is written, or EEPROM will not be programmed.
When EEPE is written, the EEPROM will be programmed according to the EEPMn bit settings.
When EEPE has been set, the CPU is halted for two cycles before the next instruction is exe-
cuted. After the write access time has elapsed, the EEPE bit is cleared by hardware.
Note that an EEPROM write operation blocks all software programming of Flash, fuse bits, and
lock bits.
Bit
765
432
10
EEPM1
EEPM0
EERIE
EEMPE
EEPE
EERE
EECR
Read/Write
R
R/W
Initial Value
0
X
0
X
0
Table 5-4.
EEPROM Programming Mode Bits and Programming Times
EEPM1
EEPM0
Programming Time
Operation
0
3.4 ms
Erase and Write in one operation (Atomic Operation)
0
1
1.8 ms
Erase Only
1
0
1.8 ms
Write Only
1
Reserved for future use
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ATTINY2313A-MU 功能描述:8位微控制器 -MCU 2K FLASH 128B EE 128B SRAM 1 UART RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
ATTINY2313A-MUR 功能描述:8位微控制器 -MCU AVR 2K FLSH 128B EE 128B SRAM 1UART20MHz RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
ATTINY2313A-PU 功能描述:8位微控制器 -MCU 2K FLASH 128B EE 128B SRAM 1 UART RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
ATTINY2313A-SU 功能描述:8位微控制器 -MCU 2K FLASH 128B EE 128B SRAM 1 UART RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
ATTINY2313A-SUR 功能描述:8位微控制器 -MCU AVR 2K FLSH 128B EE 128B SRAM 1UART20MHz RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT