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参数资料
| 型号： | AU5517DR2G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 运动控制电子 |
| 英文描述： | Dual Operational Transconductance Amplifier |
| 中文描述： | DUAL OP-AMP, 5000 uV OFFSET-MAX, PDSO16 |
| 封装： | LEAD FREE, SOIC-16 |
| 文件页数： | 3/14页 |
| 文件大小： | 194K |
| 代理商： | AU5517DR2G |
NE5517, NE5517A, AU5517
http://onsemi.com
3
NOTE:
V+ of output buffers and amplifiers are internally connected.
AB
IBIAS
B
BIAS
B
I(+)
INB
()
OUB
V+ (1)
B
INPUT
BUB
9
AMP
INA
BIAS
A
I(+)
A
INPUT
()
A
OUA
V
INPUT
A
BUFFER
OUA
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
+
B
+
A
Figure 2. Connection Diagram
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (Note 1)
V
S
P
D
44 V
DC
or
±
22
V
Power Dissipation, T
amb
= 25
°
C (Still Air) (Note 2)
NE5517N, NE5517AN
NE5517D, AU5517D
1500
1125
mW
Thermal Resistance, JunctiontoAmbient
D Package
N Package
R
JA
140
94
°
C/W
Differential Input Voltage
V
IN
I
D
I
ABC
I
SC
I
OUT
T
amb
±
5.0
V
Diode Bias Current
2.0
mA
Amplifier Bias Current
2.0
mA
Output Short-Circuit Duration
Indefinite
Buffer Output Current (Note 3)
20
mA
Operating Temperature Range
NE5517N, NE5517AN
AU5517T
0
°
C to +70
°
C
40
°
C to +125
°
C
°
C
Operating Junction Temperature
T
J
V
DC
T
stg
T
sld
150
°
C
DC Input Voltage
+V
S
to V
S
65
°
C to +150
°
C
Storage Temperature Range
°
C
°
C
Lead Soldering Temperature (10 sec max)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For selections to a supply voltage above
±
22 V, contact factory.
2. The following derating factors should be applied above 25
°
C
N package at 10.6 mW/
°
C
D package at 7.1 mW/
°
C.
3. Buffer output current should be limited so as to not exceed package dissipation.
230
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