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参数资料
| 型号： | AU5517DR2G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 运动控制电子 |
| 英文描述： | Dual Operational Transconductance Amplifier |
| 中文描述： | DUAL OP-AMP, 5000 uV OFFSET-MAX, PDSO16 |
| 封装： | LEAD FREE, SOIC-16 |
| 文件页数： | 5/14页 |
| 文件大小： | 194K |
| 代理商： | AU5517DR2G |
NE5517, NE5517A, AU5517
http://onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS
V
OUT
V
CMR
V
OUT
μ
10
10
10
10
1
P
0.1 A
1 A
10 A
100 A
1000 A
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 6. Peak Output Current
+125
°
C
4
3
2
+25
°
C
-55
°
C
10
10
10
10
10
4
3
2
5
-50
°
C -25
°
C
0
°
C 25
°
C 50
°
C 75
°
C100
°
C125
°
C
AMBIENT TEMPERATURE (T
A
)
0V
(+)V
IN
= ()V
IN
= V
OUT
= 36V
L
μ
10
10
10
10
10
T
4
3
2
0.1 A
1 A
10 A
100 A
1000 A
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 10. Transconductance
+125
°
C
+25
°
C
-55
°
C
5
gM
mq
m
M
PINS 2, 15
OPEN
V
S
=
±
15V
10
10
1
0.1
0.01
I
1
2
0.1 A
1 A
10 A
100 A
1000 A
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 11. Input Resistance
PINS 2, 15
OPEN
10
10
10
10
1
I
3
2
4
INPUT DIFFERENTIAL VOLTAGE
+125
°
C
+25
°
C
0
1
2
3
4
5
6
7
5
4
3
2
1
0
I
0.1 A
1 A
10 A
100 A
1000 A
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 3. Input Offset Voltage
V
S
=
±
15V
+125
°
C
+25
°
C
-55
°
C
+125
°
C
-1
-2
-3
-4
-5
-6
-7
-8
5
4
3
2
1
0
P
-1
-2
-3
-4
-5
-6
-7
-8
0.1 A
1 A
10 A
100 A
1000 A
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 7. Peak Output Voltage and
Common-Mode Range
T
amb
= 25
°
C
V
CMR
RLOAD =
∞
C
10
10
10
1
0.1
I
2
3
0.1 A
1 A
10 A
100 A
1000 A
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 4. Input Bias Current
V
S
=
±
15V
+125
°
C
+25
°
C
-55
°
C
10
10
10
10
1
I
3
4
0.1 A
1 A
10 A
100 A
1000 A
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 5. Input Bias Current
V
S
=
±
15V
+125
°
C
+25
°
C
-55
°
C
2
Figure 8. Leakage Current
Figure 9. Input Leakage
Ω
V
S
=
±
15V
V
S
=
±
15V
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