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参数资料
| 型号： | AU5517DR2G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 运动控制电子 |
| 英文描述： | Dual Operational Transconductance Amplifier |
| 中文描述： | DUAL OP-AMP, 5000 uV OFFSET-MAX, PDSO16 |
| 封装： | LEAD FREE, SOIC-16 |
| 文件页数： | 4/14页 |
| 文件大小： | 194K |
| 代理商： | AU5517DR2G |
NE5517, NE5517A, AU5517
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(Note 4)
Characteristic
Test Conditions
Symbol
AU5517/NE5517
NE5517A
Unit
Min
Typ
Max
Min
Typ
Max
Input Offset Voltage
Overtemperature Range
I
ABC
5.0 A
V
OS
0.4
0.3
5.0
5.0
0.4
0.3
2.0
5.0
2.0
mV
V
OS
/ T
Avg. TC of Input Offset Voltage
7.0
7.0
V/
°
C
V
OS
Including Diodes
Diode Bias Current
(I
D
) = 500 A
0.5
5
0.5
2.0
mV
Input Offset Change
5.0 A
≤
I
ABC
≤
500 A
V
OS
0.1
0.1
3.0
mV
Input Offset Current
I
OS
0.1
0.6
0.1
0.6
A
I
OS
/ T
Avg. TC of Input Offset Current
0.001
0.001
A/
°
C
Input Bias Current
Overtemperature Range
I
BIAS
0.4
1.0
5.0
8.0
0.4
1.0
5.0
7.0
A
I
B
/ T
Avg. TC of Input Current
0.01
0.01
A/
°
C
Forward Transconductance
Overtemperature Range
g
M
6700
5400
9600
13000
7700
4000
9600
12000
mho
g
M
Tracking
0.3
0.3
dB
Peak Output Current
R
L
= 0, I
ABC
= 5.0 A
R
= 0, I
= 500 A
R
L
= 0, Overtemperature
Range
I
OUT
350
300
5.0
500
650
3.0
350
300
5.0
500
7.0
650
A
Peak Output Voltage
Positive
Negative
R
L
=
∞
, 5.0 A
≤
I
ABC
≤
500 A
R
L
=
∞
, 5.0 A
≤
I
ABC
≤
500 A
V
OUT
+12
12
+14.2
14.4
+12
12
+14.2
14.4
V
Supply Current
I
ABC
= 500 A, both channels
I
CC
2.6
4.0
2.6
4.0
mA
V
OS
Sensitivity
Positive
Negative
V
OS
/ V+
V
OS
/ V
20
20
150
150
20
20
150
150
V/V
Common-mode Rejection
Ration
CMRR
80
110
80
110
dB
Common-mode Range
±
12
±
13.5
±
12
±
13.5
V
Crosstalk
Referred to Input (Note 5)
20 Hz < f < 20 kHz
100
100
dB
Differential Input Current
I
ABC
= 0, Input =
±
4.0 V
I
IN
0.02
100
0.02
10
nA
Leakage Current
I
ABC
= 0 (Refer to Test Circuit)
0.2
100
0.2
5.0
nA
Input Resistance
R
IN
10
26
10
26
k
Open-loop Bandwidth
B
W
2.0
2.0
MHz
Slew Rate
Unity Gain Compensated
SR
50
50
V/ s
Buffer Input Current
5
IN
BUFFER
0.4
5.0
0.4
5.0
A
Peak Buffer Output Voltage
5
VO
BUFFER
10
10
V
V
BE
of Buffer
Refer to Buffer V
Test
Circuit (Note 6)
0.5
5.0
0.5
5.0
mV
4. These specifications apply for V
=
±
15 V, T
= 25
°
C, amplifier bias current (I
ABC
) = 500 A, Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
5. These specifications apply for V
S
=
±
15 V, I
ABC
= 500 A, R
OUT
= 5.0 k connected from the buffer output to V
S
and the input of the buffer
is connected to the transconductance amplifier output.
6. V
S
=
±
15, R
OUT
= 5.0 k connected from Buffer output to V
S
and 5.0 A
≤
I
ABC
≤
500 A.
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