参数资料
型号: AU5517DR2G
厂商: ON Semiconductor
文件页数: 12/15页
文件大小: 0K
描述: IC AMP 2 CURRENT CTRL 16-SOIC
标准包装: 1
放大器类型: 跨导
电路数: 2
输出类型: 推挽式
转换速率: 50 V/µs
增益带宽积: 2MHz
电流 - 输入偏压: 400nA
电压 - 输入偏移: 400µV
电流 - 电源: 2.6mA
电流 - 输出 / 通道: 650µA
电压 - 电源,单路/双路(±): 4 V ~ 44 V,±2 V ~ 22 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC
包装: 剪切带 (CT)
其它名称: AU5517DR2GOSCT
NE5517, NE5517A, AU5517
http://onsemi.com
6
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1VOL
T
RMS
(dB)
20
0
-20
-40
-60
-80
-100
OUTPUT
VOL
TAGE
RELA
TIVE
TO
0.1mA1mA10mA
100mA
1000mA
IABC AMPLIFIER BIAS CURRENT (mA)
VS = ±15V
RL = 10kW
OUTPUT NOISE
20kHz BW
VIN = 40mVP-P
VIN = 80mVP-P
VS = ±15V
Tamb = +25°C
CIN
COUT
7
6
5
4
3
2
1
0
0.1mA1mA10mA
100mA
1000mA
CAP
ACIT
ANCE
(pF)
AMPLIFIER BIAS CURRENT (IABC)
0.1mA1mA10mA
100mA
1000mA
2000
1800
1600
1400
1200
1000
800
600
400
200
0
AMPLIFIER
BIAS
VOL
TAGE
(mV)
AMPLIFIER BIAS CURRENT (IABC)
-55°C
+25°C
+125°C
OUTPUT
DIST
ORTION
(%)
100
10
1
0.1
0.01
1
10
100
1000
DIFFERENTIAL INPUT VOLTAGE (mVP-P)
600
500
400
300
200
100
0
10
100
1k
10k
100k
OUTPUT
NOISE
CURRENT
(pA/Hz)
FREQUENCY (Hz)
IABC = 1mA
IABC = 100mA
Figure 12. Amplifier Bias Voltage vs.
Amplifier Bias Current
Figure 13. Input and Output
Capacitance
Figure 14. Distortion vs. Differential
Input Voltage
Figure 15. Voltage vs. Amplifier Bias Current
Figure 16. Noise vs. Frequency
IABC = 1mA
RL = 10kW
Figure 17. Leakage Current Test Circuit
Figure 18. Differential Input Current Test Circuit
Figure 19. Buffer VBE Test Circuit
4, 13
2, 15
3, 14
+
NE5517
11
6
1, 15
5, 12
7, 10
8, 9
A
+36V
4, 13
2, 15
3, 14
+
NE5517
11
6
1, 10
5, 12
A
+15V
15V
4V
V
V+
50kW
V
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