参数资料
型号: AU5517DR2G
厂商: ON Semiconductor
文件页数: 9/15页
文件大小: 0K
描述: IC AMP 2 CURRENT CTRL 16-SOIC
标准包装: 1
放大器类型: 跨导
电路数: 2
输出类型: 推挽式
转换速率: 50 V/µs
增益带宽积: 2MHz
电流 - 输入偏压: 400nA
电压 - 输入偏移: 400µV
电流 - 电源: 2.6mA
电流 - 输出 / 通道: 650µA
电压 - 电源,单路/双路(±): 4 V ~ 44 V,±2 V ~ 22 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC
包装: 剪切带 (CT)
其它名称: AU5517DR2GOSCT
NE5517, NE5517A, AU5517
http://onsemi.com
3
NOTE: V+ of output buffers and amplifiers are internally connected.
B
AMP
BIAS
INPUT
B
DIODE
BIAS
B
INPUT
(+)
B
INPUT
()
B
OUTPUT
V+ (1)
B
BUFFER
INPUT
B
BUFFER
OUTPUT
AMP
BIAS
INPUT
DIODE
BIAS
INPUT
(+)
INPUT
()
OUTPUT
V
BUFFER
INPUT
BUFFER
OUTPUT
A
AA
A
123
4
5
6
7
8
16
15
14
13
12
11
10
9
+
B
+
A
Figure 2. Connection Diagram
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (Note 1)
VS
44 VDC or ±22
V
Power Dissipation, Tamb = 25 °C (Still Air) (Note 2)
NE5517N, NE5517AN
NE5517D, AU5517D
PD
1500
1125
mW
Thermal Resistance, JunctiontoAmbient
D Package
N Package
RqJA
140
94
°C/W
Differential Input Voltage
VIN
±5.0
V
Diode Bias Current
ID
2.0
mA
Amplifier Bias Current
IABC
2.0
mA
Output Short-Circuit Duration
ISC
Indefinite
Buffer Output Current (Note 3)
IOUT
20
mA
Operating Temperature Range
NE5517N, NE5517AN
AU5517T
Tamb
0 °C to +70 °C
40 °C to +125 °C
°C
Operating Junction Temperature
TJ
150
°C
DC Input Voltage
VDC
+VS to VS
Storage Temperature Range
Tstg
65 °C to +150 °C
°C
Lead Soldering Temperature (10 sec max)
Tsld
230
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For selections to a supply voltage above ±22 V, contact factory.
2. The following derating factors should be applied above 25 °C
N package at 10.6 mW/°C
D package at 7.1 mW/°C.
3. Buffer output current should be limited so as to not exceed package dissipation.
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