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参数资料
型号： AUIRF2805L
元件分类： JFETs
英文描述： 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装： ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
文件页数： 1/14页
文件大小： 270K
代理商： AUIRF2805L
HEXFET Power MOSFET
08/29/11
www.irf.com
1
S
D
G
AUIRF2805S
AUIRF2805L
D2Pak
AUIRF2805S
TO-262
AUIRF2805L
AUTOMOTIVE GRADE
GD
S
Gate
Drain
Source
l
Advanced Planar Technology
l
Low On-Resistance
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Features
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
55V
RDS(on) max.
4.7m
Ω
ID
135A
h
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy
d
EAS (Tested)
Single Pulse Avalanche Energy Tested value
j
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
i
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθJA
Junction-to-Ambient (PCB mounted)
k
–––
40
°C/W
300 (1.6mm from case )
1.3
±20
2.0
See Fig.12a,12b, 15,16
W
-55 to + 175
mJ
380
200
Max.
135
h
96
h
700
920
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of
other applications.
PD - 96383A
相关PDF资料
PDF描述
AUIRF2805STRR 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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AUIRF2907ZS7PTR 180 A, 75 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET
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相关代理商/技术参数
参数描述
AUIRF2805S 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF2805S 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 75A TO-26
AUIRF2805STRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF2805STRR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF2807 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 13mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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