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参数资料
| 型号： | AUIRF2805L |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 12/14页 |
| 文件大小： | 270K |
| 代理商： | AUIRF2805L |
AUIRF2805S/L
www.irf.com
7
D.U.T.
VDS
ID
IG
3mA
VGS
.3
μF
50K
Ω
.2
μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
VGS
tp
V(BR)DSS
IAS
QG
QGS
QGD
VG
Charge
10 V
25
50
75
100
125
150
175
0
200
400
600
800
Starting T , Junction Temperature ( C)
E
,Si
ngl
ePul
se
Aval
anche
Ener
gy
(
m
J)
J
AS
°
ID
TOP
BOTTOM
42.5A
73.5A
104A
-75 -50 -25
0
25
50
75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
-V
G
S
(t
h)
G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 250μA
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PDF描述 |
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| AUIRF2805STRR | 75 A, 55 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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| AUIRF2907ZS7PTR | 180 A, 75 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF2907ZS7PTL | 180 A, 75 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF2907ZS-7P | 180 A, 75 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF2805S | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF2805S | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 75A TO-26 |
| AUIRF2805STRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF2805STRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF2807 | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 13mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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