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参数资料
| 型号： | AUIRF3805STRL |
| 元件分类： | JFETs |
| 英文描述： | 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 1/15页 |
| 文件大小： | 382K |
| 代理商： | AUIRF3805STRL |
07/20/10
www.irf.com
1
HEXFET Power MOSFET
AUIRF3805
AUIRF3805S
AUIRF3805L
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
S
D
G
GD
S
Gate
Drain
Source
D2Pak
AUIRF3805S
TO-220AB
AUIRF3805
TO-262
AUIRF3805L
S
D
G
D
S
D
G
D
S
D
G
D
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
55V
RDS(on) typ.
2.6m
max.
3.3m
ID (Silicon Limited) 210A c
ID (Package Limited) 160A
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
e
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
e
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
h
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.5
l
RθCS
Case-to-Sink, Flat Greased Surface
i
0.50
–––
RθJA
Junction-to-Ambient
i
–––
62
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
A
940
650
See Fig.12a, 12b, 15, 16
300
2.0
± 20
mJ
Max.
210
150
890
160
°C
°C/W
-55 to + 175
300
10 lbf
yin (1.1Nym)
PD - 96319
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRF3805L | 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRF3808STRL | 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF3808STRR | 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF3808S | 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF3808 | 140 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF3805STRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF3808 | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF3808 | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 140A TO-2 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 75V, 140A, TO-220AB |
| AUIRF3808S | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF3808S | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 106A TO-2 |
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