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参数资料
型号： AUIRF3808S
元件分类： JFETs
英文描述： 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装： ROHS COMPLIANT, PLASTIC, D2PAK-3
文件页数： 1/12页
文件大小： 214K
代理商： AUIRF3808S
AUIRF3808S
HEXFET Power MOSFET
07/06/11
www.irf.com
1
PD - 97698
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET Power
MOSFETs utilizes the latest processing tech-
niques to achieve low on-resistance per silicon
area. This benefit combined with the fast switch-
ing speed and ruggedized device design that
HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient
and reliable device for use in Automotive and a
wide variety of other applications.
S
D
G
GD
S
Gate
Drain
Source
D2Pak
AUIRF3808S
GD
S
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Features
●
Advanced Planar Technology
●
Low On-Resistance
●
Dynamic dV/dT Rating
●
175°C Operating Temperature
●
Fast Switching
●
Fully Avalanche Rated
●
Repetitive Avalanche Allowed up to Tjmax
●
Lead-Free, RoHS Compliant
●
Automotive Qualified *
VDSS
75V
RDS(on) typ.
5.9m
Ω
max.
7.0mΩ
ID
106A
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
dv/dt
Peak Diode Recovery
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.75
°C/W
RθJA
Junction-to-Ambient (PCB Mounted, steady-state)
i
–––
40
Max.
106
75
550
A
°C
300
-55 to + 175
± 20
1.3
430
82
200
5.5
See Fig. 12a, 12b, 15, 16
相关PDF资料
PDF描述
AUIRF3808 140 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF4104 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF4104STRR 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF4104STRL 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF4104S 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
AUIRF3808S 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 106A TO-2
AUIRF3808STRL 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF3808STRR 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF4104 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF4104S 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 1.4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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