参数资料
型号: AUIRF3808S
元件分类: JFETs
英文描述: 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件页数: 8/12页
文件大小: 214K
代理商: AUIRF3808S
AUIRF3808S
www.irf.com
5
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
VDS
Pulse Width ≤ 1 s
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJC
C
P
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
her
m
al
Res
pons
e
(Z
)
1
th
JC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
I D
,
D
ra
in
C
ur
re
nt
(A
)
相关PDF资料
PDF描述
AUIRF3808 140 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF4104 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRF4104STRR 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF4104STRL 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF4104S 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
AUIRF3808S 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 106A TO-2
AUIRF3808STRL 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF3808STRR 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF4104 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF4104S 功能描述:MOSFET AUTO 40V 1 N-CH HEXFET 1.4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube