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参数资料
| 型号： | AUIRF3808S |
| 元件分类： | JFETs |
| 英文描述： | 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 5/12页 |
| 文件大小： | 214K |
| 代理商： | AUIRF3808S |
AUIRF3808S
2
www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.130mH
RG = 25Ω, IAS = 82A. (See Figure 12).
ISD ≤ 82A, di/dt ≤ 310A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
S
D
G
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.086 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
5.9
7.0
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
100
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
150
220
nC
Qgs
Gate-to-Source Charge
–––
31
47
Qgd
Gate-to-Drain ("Miller") Charge
–––
50
76
td(on)
Turn-On Delay Time
–––
16
–––
ns
tr
Rise Time
–––
140
–––
td(off)
Turn-Off Delay Time
–––
68
–––
tf
Fall Time
–––
120
–––
LD
Internal Drain Inductance
–––
4.5
–––
nH Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
5310
–––
pF
Coss
Output Capacitance
–––
890
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
Coss
Output Capacitance
–––
6010
–––
Coss
Output Capacitance
–––
570
–––
Coss eff.
Effective Output Capacitance (Time Related) –––
1140
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
106
A
(Body Diode)
ISM
Pulsed Source Current
–––
550
A
(Body Diode)
d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
93
140
ns
Qrr
Reverse Recovery Charge
–––
340
510
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = -20V
VGS = 10V f
VDD = 38V
Conditions
ID = 82A
VDS = 60V
VGS = 0V, VDS = 0V to 60V
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 82A f
VDS = VGS, ID = 250μA
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VDS = 25V, ID = 82A
VGS = 20V
ID = 82A
RG = 2.5
Ω
VGS = 0V, VDS = 1.0V, = 1.0MHz
TJ = 25°C, IF = 82A
Conditions
VGS = 10V f
VGS = 0V
VDS = 25V
= 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 60V, = 1.0MHz
di/dt = 100A/μs
f
MOSFET symbol
showing the
TJ = 25°C, IS = 82A, VGS = 0V f
integral reverse
p-n junction diode.
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