参数资料
型号: AUIRF3805STRL
元件分类: JFETs
英文描述: 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: ROHS COMPLIANT, PLASTIC, D2PAK-3
文件页数: 9/15页
文件大小: 382K
代理商: AUIRF3805STRL
AUIRF3805/S/L
www.irf.com
3
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
Calculated continuous current based on maximum
allowable junction temperature. Bond wire current
limit is 160A. Note that current limitations arising from
heating of the device leads may occur with some lead
mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11).
This value determined from sample failure population ,
starting TJ = 25°C, L = 0.23mH RG = 25, IAS = 75A,
VGS =10V.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time
as Coss while VDS is rising from 0 to
80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This is only applied to TO-220AB pakcage.
This is applied to D2Pak, when mounted on 1" square PCB
(FR- 4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
TO-220 device will have an Rth of 0.45°C/W.
** All AC and DC test condition based on former Package limitated
current of 75A.
Qualification Information
3L-D2 PAK
3L-TO-262
3L-TO-220
N/A
RoHS Compliant
Yes
ESD
Machine Model
Class M4(+/-425V)
(per AEC-Q101-002)
Human Body Model
Class H3A(+/-4000V)
(per AEC-Q101-001)
Charged Device Model
Class C5 (+/-1000V)
(per AEC-Q101-005)
Moisture Sensitivity Level
MSL1 , 260°C
Qualification Level
Automotive
(per AEC-Q101)
Comments:
This
part
number(s)
passed
Automotive
qualification.
IR’s
Industrial
and
Consumer
qualification
level is
granted
by
extension of the higher Automotive level.
相关PDF资料
PDF描述
AUIRF3805L 160 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF3808STRL 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF3808STRR 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF3808S 106 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF3808 140 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
AUIRF3805STRR 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF3808 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF3808 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 140A TO-2 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 75V, 140A, TO-220AB
AUIRF3808S 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRF3808S 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 75V 106A TO-2