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参数资料
| 型号： | AUIRF7739L2TR |
| 元件分类： | JFETs |
| 英文描述： | 46 A, 40 V, 0.001 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-9 |
| 文件页数： | 1/11页 |
| 文件大小： | 369K |
| 代理商： | AUIRF7739L2TR |
Description
The AUIRF7739L2TR(1) combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the
lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-
1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automo-
tive power systems.
This HEXFET Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging platform
coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and performance improvement specifically in
motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to
achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak
current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
www.irf.com
1
12/01/2010
AUIRF7739L2TR
AUIRF7739L2TR1
Applicable DirectFET Outline and Substrate Outline
Automotive DirectFET Power MOSFET
AUTOMOTIVE GRADE
DirectFET
ISOMETRIC
L8
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Features
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead free, RoHS Compliant and Halogen free
Automotive Qualified*
SB
SC
M2
M4
L4
L6
L8
V(BR)DSS
40V
RDS(on) typ.
700
max.
1000
ID (Silicon Limited)
270A
Qg
220nC
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A) is 25°C, unless otherwise specified.
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
A
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
f
PD @TC = 25°C
Power Dissipation
f
PD @TA = 25°C
Power Dissipation
e
EAS
Single Pulse Avalanche Energy (Thermally Limited)
h
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
g
IAR
Avalanche Current
g
A
EAR
Repetitive Avalanche Energy
g
mJ
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
e
–––
40
RθJA
Junction-to-Ambient
j
12.5
–––
RθJA
Junction-to-Ambient
k
20
–––
°C/W
RθJCan
Junction-to-Can
fl
–––
1.2
RθJ-PCB
Junction-to-PCB Mounted
–––
0.5
Linear Derating Factor
f
W/°C
Max.
270
190
1070
160
270
See Fig.12a, 12b, 15, 16
40
W
3.8
270
°C
-55 to + 175
± 20
375
0.83
46
125
PD - 97442B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF7739L2TR_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Automotive DirectFET Power MOSFET |
| AUIRF7739L2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7749L2TR | 功能描述:MOSFET NCH 60V 36A DIRECTFET 制造商:infineon technologies 系列:汽车级，AEC-Q101，OptiMOS? 包装:剪切带（CT） 零件状态:在售 FET 类型:N 沟道 技术:MOSFET (Metal Oxide) 漏源极电压（Vdss）:60V 电流 - 连续漏极（Id）（25°C 时）:36A（Ta），345A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:1.5 毫欧 @ 120A，10V 不同 Id 时的 Vgs（th）（最大值）:4V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:275nC @ 10V 不同 Vds 时的输入电容（Ciss）:10655pF @ 25V FET 功能:- 功率耗散（最大值）:* 工作温度:-55°C ~ 175°C（TJ） 安装类型:表面贴装 封装/外壳:DirectFET? 等距 L8 供应商器件封装:DIRECTFET L8 标准包装:1 |
| AUIRF7759L2TR | 功能描述:MOSFET Automotive 75V 160A 2.3mOhm DirectFET 2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7759L2TR1 | 功能描述:MOSFET Automotive 75V 160A 2.3mOhm DirectFET 2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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