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参数资料
| 型号： | AUIRF9Z34N |
| 元件分类： | JFETs |
| 英文描述： | 19 A, 55 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 241K |
| 代理商： | AUIRF9Z34N |
AUIRF9Z34N
HEXFET Power MOSFET
PD - 97627A
06/21/11
G
D
S
Gate
Drain
Source
TO-220AB
AUIRF9Z34N
S
D
G
D
Features
l Advanced Planar Technology
l P-Channel MOSFET
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
V(BR)DSS
-55V
RDS(on) max.
0.10
Ω
ID
-19A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
g
–––
2.2
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
-5.0
6.8
180
-10
68
0.45
± 20
Max.
-19
-14
-68
-55 to + 175
300
10 lbf
yin (1.1Nym)
AUTOMOTIVE GRADE
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| AUIRFS3006-7TRL | 240 A, 60 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF9Z34N | 制造商:International Rectifier 功能描述:P CH MOSFET AUTOMOTIVE -55V -19A TO- 制造商:International Rectifier 功能描述:P CH MOSFET, AUTOMOTIVE, -55V, -19A, TO-220AB |
| AUIRFB3207 | 功能描述:MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFB3806 | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 15.8mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFB4110 | 制造商:International Rectifier 功能描述: |
| AUIRFB4310Z | 制造商:International Rectifier 功能描述: |
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