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参数资料
| 型号： | AUIRF9Z34N |
| 元件分类： | JFETs |
| 英文描述： | 19 A, 55 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 241K |
| 代理商： | AUIRF9Z34N |
AUIRF9Z34N
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.6mH, RG = 25Ω, IAS = -10A. (See Figure 12)
ISD ≤ -10A, di/dt ≤ -290A/s, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300s; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.05
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.10
Ω
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
gfs
Forward Transconductance
4.2
–––
S
IDSS
Drain-to-Source Leakage Current
–––
-25
μA
–––
-250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
35
Qgs
Gate-to-Source Charge
–––
79
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
16
td(on)
Turn-On Delay Time
–––
13
–––
tr
Rise Time
–––
55
–––
td(off)
Turn-Off Delay Time
–––
30
–––
ns
tf
Fall Time
–––
41
–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
620
–––
Coss
Output Capacitance
–––
280
–––
pF
Crss
Reverse Transfer Capacitance
–––
140
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
-19
(Body Diode)
A
ISM
Pulsed Source Current
–––
-68
(Body Diode)
VSD
Diode Forward Voltage
–––
-1.6
V
trr
Reverse Recovery Time
–––
54
82
ns
Qrr
Reverse Recovery Charge
–––
110
160
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = -25V
= 1.0MHz, See Fig. 5
TJ = 25°C, IF = -10A
di/dt = 100A/μs
f
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -10A f
VDS = VGS, ID = -250μA
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
MOSFET symbol
VDD = -28V
ID = -10A
RG = 13
Ω
TJ = 25°C, IS = -10A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
Conditions
RD = 2.6
Ω, See Fig. 10 f
VGS = 0V
Conditions
VDS = -25V, ID = -10A
ID = -10A
VDS = -44V
VGS = 20V
VGS = -20V
VGS = -10V, See Fig. 6 & 13 f
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