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参数资料
| 型号： | AUIRFS3206 |
| 元件分类： | JFETs |
| 英文描述： | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 6/13页 |
| 文件大小： | 286K |
| 代理商： | AUIRFS3206 |
AUIRFS/SL3206
2
www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.023mH
RG = 25Ω, IAS = 120A, VGS =10V. Part not recommended for use
above this value.
S
D
G
ISD ≤ 75A, di/dt ≤ 360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.4
3.0
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
210
–––
S
RG
Internal Gate Resistance
–––
0.7
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
120
170
Qgs
Gate-to-Source Charge
–––
29
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
35
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
85
–––
td(on)
Turn-On Delay Time
–––
19
–––
tr
Rise Time
–––
82
–––
td(off)
Turn-Off Delay Time
–––
55
–––
tf
Fall Time
–––
83
–––
Ciss
Input Capacitance
–––
6540
–––
Coss
Output Capacitance
–––
720
–––
Crss
Reverse Transfer Capacitance
–––
360
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
–––
1040
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 1230 –––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
33
50
TJ = 25°C
VR = 51V,
–––
37
56
TJ = 125°C
IF = 75A
Qrr
Reverse Recovery Charge
–––
41
62
TJ = 25°C
di/dt = 100A/μs
g
–––
53
80
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.1
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ID = 75A
RG =2.7Ω
VGS = 10V g
VDD = 30V
ID = 75A, VDS =0V, VGS = 10V
TJ = 25°C, IS = 75A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 75A g
VDS = VGS, ID = 150μA
VDS =60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
Conditions
VGS = 10V g
VGS = 0V
VDS = 50V
= 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 48V i, See Fig.11
VGS = 0V, VDS = 0V to 48V h
840
210
Conditions
VDS = 50V, ID = 75A
ID = 75A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS =30V
–––
nC
pF
ns
A
nC
μA
nA
ns
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3206TRL | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3206TRR | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFSL3206 | 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRFS3207ZTRL | 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3207Z | 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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