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参数资料
| 型号： | AUIRFSL3207Z |
| 元件分类： | JFETs |
| 英文描述： | 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 276K |
| 代理商： | AUIRFSL3207Z |
AUIRFS/SL3207Z
2
www.irf.com
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.033mH
RG = 25Ω, IAS = 102A, VGS =10V. Part not recommended for use
above this value.
S
D
G
ISD ≤ 75A, di/dt ≤ 1730A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.091 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.3
4.1
mΩ
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
280
–––
S
RG(int)
Internal Gate Resistance
–––
0.80
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
120
170
Qgs
Gate-to-Source Charge
–––
27
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
33
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
87
–––
td(on)
Turn-On Delay Time
–––
20
–––
tr
Rise Time
–––
68
–––
td(off)
Turn-Off Delay Time
–––
55
–––
tf
Fall Time
–––
68
–––
Ciss
Input Capacitance
–––
6920
–––
Coss
Output Capacitance
–––
600
–––
Crss
Reverse Transfer Capacitance
–––
270
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
–––
770
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)
–––
960
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
36
54
TJ = 25°C
VR = 64V,
–––
41
62
TJ = 125°C
IF = 75A
Qrr
Reverse Recovery Charge
–––
50
75
TJ = 25°C
di/dt = 100A/μs
g
–––
67
100
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.4
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
170
670
–––
pF
A
ns
nC
μA
nA
nC
ns
Conditions
VDS = 50V, ID = 75A
ID = 75A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS = 38V
Conditions
VGS = 10V g
VGS = 0V
VDS = 50V
= 1.0MHz
VGS = 0V, VDS = 0V to 60V i
VGS = 0V, VDS = 0V to 60V h
TJ = 25°C, IS = 75A, VGS = 0V g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 75A g
VDS = VGS, ID = 150μA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
ID = 75A
RG = 2.7Ω
VGS = 10V g
VDD = 49V
ID = 75A, VDS =0V, VGS = 10V
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