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| 型号： | AUIRFSL4310 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 1/13页 |
| 文件大小： | 334K |
| 代理商： | AUIRFSL4310 |
07/20/10
www.irf.com
1
AUIRFS4310
AUIRFSL4310
HEXFET Power MOSFET
S
D
G
PD - 96324
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
GD
S
Gate
Drain
Source
V(BR)DSS
100V
RDS(on) typ.
5.6m
max.
7.0m
ID (Silicon Limited)
130A c
ID (Package Limited)
75A
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
D2Pak
AUIRFS4310
TO-262
AUIRFSL4310
S
D
G
S
D
G
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
mJ
dV/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.50
RθJA
Junction-to-Ambient (PCB Mount)
j
–––
40
°C/W
A
°C
300
14
-55 to + 175
± 20
2.0
10lb
xin (1.1Nxm)
300 (1.6mm from case)
980
See Fig. 14, 15, 22a, 22b,
Max.
130
92
550
75
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS4310TRR | 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4310TRL | 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4310 | 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFSL4410Z | 97 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRFS4410ZTRL | 97 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
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|---|---|
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