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参数资料
| 型号： | AUIRFSL4310 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 10/13页 |
| 文件大小： | 334K |
| 代理商： | AUIRFSL4310 |
AUIRFS/SL4310
6
www.irf.com
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Ri (°C/W)
τi (sec)
0.1962
0.00117
0.2542
0.016569
τ
J
τ
J
τ
1
τ
1
τ2
τ
2
R
1
R
1
R
2
R
2
τ
C
Ci
i
/Ri
Ci=
τi/Ri
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max)
is exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2
DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
E
A
R
,A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
0.1
1
10
100
A
va
la
nc
he
C
ur
re
nt
(A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Τ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C
and Tstart =25°C (Single Pulse)
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS4310TRR | 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4310TRL | 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4310 | 75 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFSL4410Z | 97 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRFS4410ZTRL | 97 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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