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参数资料
| 型号： | AUIRFZ44N |
| 元件分类： | JFETs |
| 英文描述： | 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 4/11页 |
| 文件大小： | 174K |
| 代理商： | AUIRFZ44N |
AUIRFZ44N
2
www.irf.com
S
D
G
Starting TJ = 25°C, L = 0.48mH
RG = 25
Ω, IAS = 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ISD ≤ 25A, di/dt ≤ 230A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400μs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.058
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
17.5
m
Ω
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
19
–––
S
IDSS
Drain-to-Source Leakage Current
–––
25
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
nA
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
–––
63
Qgs
Gate-to-Source Charge
–––
14
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
23
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––
60
–––
td(off)
Turn-Off Delay Time
–––
44
–––
ns
tf
Fall Time
–––
45
–––
LD
Internal Drain Inductance
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
from package
and center of die contact
Ciss
Input Capacitance
–––
1470
–––
Coss
Output Capacitance
–––
360
–––
Crss
Reverse Transfer Capacitance
–––
88
–––
EAS
Single Pulse Avalanche Energy
d
–––
530
g 150h
mJ
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
63
95
ns
Qrr
Reverse Recovery Charge
–––
170
260
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
= 1.0MHz, See Fig.5
pF
VDS = 25V, ID = 25A
f
ID = 25A
VDS = 44V
Conditions
VGS = 10V
, See Fig.10f
VGS = 0V
VDS = 25V
IAS = 25A, L= 0.47mH
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V f
TJ = 25°C, IF = 25A
di/dt = 100A/μs
f
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A
f
VDS = VGS, ID = 250μA
VDS =55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 10V,See Fig 6 and 13
VDD = 28V
ID = 25A
RG = 12
Ω
–––
4.5
7.5
–––
49
160
A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFZ44N | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 49A TO-22 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 55V, 49A, TO-220AB |
| AUIRFZ44NL | 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE GRADE |
| AUIRFZ44NS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44NS | 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 49A TO-26 |
| AUIRFZ44NSTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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