- 您现在的位置：买卖IC网 > PDF目录42910 > AUIRFZ44VZS 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF资料下载
参数资料
| 型号： | AUIRFZ44VZS |
| 元件分类： | JFETs |
| 英文描述： | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLAINT, PLASTIC, D2PAK-3 |
| 文件页数： | 1/13页 |
| 文件大小： | 274K |
| 代理商： | AUIRFZ44VZS |
02/07/11
www.irf.com
1
HEXFET Power MOSFET
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
S
D
G
Description
AUTOMOTIVE GRADE
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
D2Pak
AUIRFZ44VZS
GD
S
Gate
Drain
Source
S
D
G
D
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
V(BR)DSS
60V
RDS(on) typ.
9.6m
max.
12m
ID
57A
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
d
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.64
°C/W
RθJA
Junction-to-Ambient (PCB Mount)
i
–––
40
110
73
See Fig.12a, 12b, 15, 16
92
0.61
± 20
Max.
57
40
230
-55 to + 175
300 (1.6mm from case )
PD - 96354
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRF44VZSTRL | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFZ44ZS | 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFZ44ZSTRL | 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFZ44Z | 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRFZ44ZSTRR | 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFZ44VZSTRL | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44VZSTRR | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44ZS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44ZSTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。