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参数资料
型号： AUIRFZ44VZS
元件分类： JFETs
英文描述： 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装： ROHS COMPLAINT, PLASTIC, D2PAK-3
文件页数： 6/13页
文件大小： 274K
代理商： AUIRFZ44VZS
AUIRFZ44VZS
2
www.irf.com
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage60
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.061
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
9.6
12
m
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
25
–––
V
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
43
65
Qgs
Gate-to-Source Charge
–––
11
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
18
–––
td(on)
Turn-On Delay Time
–––14–––
tr
Rise Time
–––62–––
td(off)
Turn-Off Delay Time
–––35–––
ns
tf
Fall Time
–––38–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
1690
–––
Coss
Output Capacitance
–––
270
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
pF
Coss
Output Capacitance
–––
1870
–––
Coss
Output Capacitance
–––
260
–––
Coss eff.
Effective Output Capacitance
–––
510
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
57
(Body Diode)
A
ISM
Pulsed Source Current
–––
230
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
23
35
ns
Qrr
Reverse Recovery Charge
–––
17
26
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VDS = 25V, ID = 34A
ID = 34A
VDS = 48V
VGS = 20V
VGS = -20V
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 48V, = 1.0MHz
VGS = 0V, VDS = 0V to 48V f
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 34A, VGS = 0V e
TJ = 25°C, IF = 34A, VDD = 30V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 34A e
VDS = VGS, ID = 250A
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = 10V
e
VDD = 30V
ID = 34A
RG = 12
Notes
through are on page 3
相关PDF资料
PDF描述
AUIRF44VZSTRL 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFZ44ZS 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFZ44ZSTRL 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFZ44Z 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AUIRFZ44ZSTRR 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相关代理商/技术参数
参数描述
AUIRFZ44VZSTRL 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFZ44VZSTRR 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFZ44Z 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFZ44ZS 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFZ44ZSTRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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