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参数资料
| 型号： | AUIRFZ44VZS |
| 元件分类： | JFETs |
| 英文描述： | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLAINT, PLASTIC, D2PAK-3 |
| 文件页数： | 7/13页 |
| 文件大小： | 274K |
| 代理商： | AUIRFZ44VZS |
AUIRFZ44VZS
www.irf.com
3
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25
, IAS = 34A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production, starting TJ = 25°C, L = 0.12mH
RG = 25, IAS = 34A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
Qualification Information
D
2 PAK
MSL1
Qualification Level
Automotive
(per AEC-Q101)
Comments:
This
part
number(s)
passed
Automotive qualification.
IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device
Model
Class C5(+/- 1125V )
(per AEC-Q101-005)
Moisture Sensitivity Level
RoHS Compliant
Yes
ESD
Machine Model
Class M4(+/- 425V )
(per AEC-Q101-002)
Human Body Model
Class H1B(+/- 1000V )
(per AEC-Q101-001)
相关PDF资料 |
PDF描述 |
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| AUIRF44VZSTRL | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFZ44ZS | 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFZ44ZSTRL | 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFZ44Z | 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRFZ44ZSTRR | 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFZ44VZSTRL | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44VZSTRR | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44Z | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44ZS | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44ZSTRL | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 13.9mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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