参数资料
型号: AUIRFZ44N
元件分类: JFETs
英文描述: 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 7/11页
文件大小: 174K
代理商: AUIRFZ44N
AUIRFZ44N
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
2500
V
, Drain-to-Source Voltage (V)
C,
Capacitance
(pF)
DS
V
C
=
0V,
C
f = 1MHz
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
10
20
30
40
50
60
70
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,Gate-to-Source
Vol
tage
(V)
G
GS
I =
D
25A
V
= 11V
DS
V
= 27V
DS
V
= 44V
DS
0.1
1
10
100
1000
0.0
0.6
1.2
1.8
2.4
V
,Source-to-Drain Voltage (V)
I
,Reverse
Drain
Current
(A)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
I D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
相关PDF资料
PDF描述
AUIRFZ44VZSTRR 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFZ44VZS 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF44VZSTRL 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFZ44ZS 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFZ44ZSTRL 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相关代理商/技术参数
参数描述
AUIRFZ44N 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 49A TO-22 制造商:International Rectifier 功能描述:N CH MOSFET, AUTOMOTIVE, 55V, 49A, TO-220AB
AUIRFZ44NL 制造商:IRF 制造商全称:International Rectifier 功能描述:AUTOMOTIVE GRADE
AUIRFZ44NS 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRFZ44NS 制造商:International Rectifier 功能描述:N CH MOSFET AUTOMOTIVE 55V 49A TO-26
AUIRFZ44NSTRL 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube