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参数资料
| 型号： | AUIRFZ44NSTRL |
| 元件分类： | JFETs |
| 英文描述： | 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件页数： | 12/13页 |
| 文件大小： | 273K |
| 代理商： | AUIRFZ44NSTRL |
AUIRFZ44NS/L
8
www.irf.com
Fig 14. For N-channel HEXFET power MOSFETs
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
-
RG
VDD
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[
] ***
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFZ44N | 49 A, 55 V, 0.0175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AUIRFZ44VZSTRR | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFZ44VZS | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRF44VZSTRL | 57 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFZ44ZS | 51 A, 55 V, 0.0139 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFZ44NSTRR | 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 17.5mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44V | 功能描述:MOSFET 60V, 55A, 16.5mOhm Automotive MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44VZS | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44VZSTRL | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFZ44VZSTRR | 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 12mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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