参数资料
型号: AUIRLR3705ZTRR
元件分类: JFETs
英文描述: 42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装: ROHS COMPLIANT, PLASTIC, DPAK-3
文件页数: 3/13页
文件大小: 287K
代理商: AUIRLR3705ZTRR
AUIRLR3705Z
www.irf.com
11
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
相关PDF资料
PDF描述
AUIRLR3705ZTRL 42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRLS3034-7TRL 240 A, 40 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRLS3034-7P 240 A, 40 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRLS3034-7TRR 240 A, 40 V, 0.0014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
AUIRLS3034TRR 195 A, 40 V, 0.0017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相关代理商/技术参数
参数描述
AUIRLR3915 功能描述:MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRLR3915TR 功能描述:MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRLR3915TRL 功能描述:MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRLR3915TRR 功能描述:MOSFET 55V, 61A, 14 mOhm Auto Lgc Lvl MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRLS3034 功能描述:MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube