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参数资料
型号： AUIRLR3705ZTRR
元件分类： JFETs
英文描述： 42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封装： ROHS COMPLIANT, PLASTIC, DPAK-3
文件页数： 6/13页
文件大小： 287K
代理商： AUIRLR3705ZTRR
AUIRLR3705Z
2
www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25, IAS = 42A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.12mH, RG = 25, IAS = 42A,
VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage55
–––
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.053
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
6.5
8.0
m
–––
11
–––
12
VGS(th)
Gate Threshold Voltage1.0
–––
3.0
V
gfs
Forward Transconductance
89
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
44
66
Qgs
Gate-to-Source Charge–––
13
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge–––
22
–––
td(on)
Turn-On Delay Time
–––17–––
tr
Rise Time
–––
150
–––
td(off)
Turn-Off Delay Time
–––33–––
ns
tf
Fall Time
–––70–––
LD
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2900
–––
Coss
Output Capacitance
–––
420
–––
Crss
Reverse Transfer Capacitance
–––
230
–––
pF
Coss
Output Capacitance
–––
1550
–––
Coss
Output Capacitance
–––
320
–––
Coss eff.
Effective Output Capacitance
–––
500
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
42
(Body Diode)
A
ISM
Pulsed Source Current
–––
360
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
2142ns
Qrr
Reverse Recovery Charge
–––
14
28
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 16V
VGS = -16V
VDS = VGS, ID = 250A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VDS = 44V
VDS = 25V, ID = 42A
ID = 42A
Conditions
VGS = 5.0V e
VGS = 0V
VDS = 25V
= 1.0MHz
VGS = 0V, VDS = 1.0V, = 1.0MHz
VGS = 0V, VDS = 44V, = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 42A, VGS = 0V e
TJ = 25°C, IF = 42A, VDD = 28V
di/dt = 100A/s
e
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 21A e
VGS = 10V, ID = 42A e
VGS = 5.0V, ID = 34A e
VGS = 5.0V
e
VDD = 28V
ID = 42A
RG = 4.2
相关PDF资料
PDF描述
AUIRLR3705ZTRL 42 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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