参数资料
| 型号： | BA33E00WHFP-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 12/19页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V/ADJ .6A HRP7 |
| 标准包装： | 2,000 |
| 稳压器拓扑结构： | 正，固定式和可调式 |
| 输出电压： | 3.3V，0.8 V ~ 3.3 V |
| 输入电压： | 2.8 V ~ 16 V |
| 电压 - 压降（标准）： | 0.3V @ 300mA |
| 稳压器数量： | 2 |
| 电流 - 输出： | 600mA（最小值） |
| 工作温度： | -25°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 7-SMD |
| 供应商设备封装： | HRP7 |
| 包装： | 带卷 (TR) |
BA3259HFP
BA30E00WHFP
Datasheet
The Icc (circuit current) varies with the load.
Refer to the above and implement proper thermal designs so that the IC will not be used under conditions of
excess power dissipation Pd under all operating temperatures.
9
8 (3) 7.3W
7
10
Board size: 70 mm × 70 mm × 1.6 mm
(with a thermal via incorporated by the board)
Board surface area: 10.5 mm × 10.5 mm
(1) 2-layer board (Backside copper foil area: 15 mm × 15 mm)
(2) 2-layer board (Backside copper foil area: 70 mm × 70 mm)
(3) 4-layer board (Backside copper foil area: 70 mm × 70 mm)
6 (2) 5.5W
5
4
3 (1) 2.3W
2
1
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE: Ta [°C]
10.0
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0
200
Unstable region
Stable region
400 600
Io [mA]
10.0
5.0
2.0
1.0
0.7
0.5
0.2
0.1
0.05
0.02
0.01
800 1000 0
200
Unstable region
Stable region
Unstable region
400 600
Io [mA]
800 1000
Fig.27 Ambient Temperature vs. Power Dissipation
● I/O equivalence circuit
BA3259HFP
Fig.28 BA3259HFP
ESR Characteristics
BA30E00WHFP
Fig.29 BA30E00WHFP
ESR Characteristics
Vcc
Vcc1
Vcc1
Vcc2
Vcc
Vo1
Vo2
Vo2
Vo1
Fig.30 BA3259HFP I/O equivalence circuit
ADJ
Fig.31 BA30E00WHFP I/O equivalence circuit
ADJ
● Explanation of External Components
○ BA3259HFP
1) Vcc (Pin 1)
It is recommended that a ceramic capacitor with a capacitance of approximately 3.3μF is placed between Vcc and GND
at a position closest to the pins as possible.
2) Vo (Pins 4 and 5)
Insert a capacitor between Vo and GND in order to prevent output oscillation. The capacitor may oscillate if the
capacitance changes as a result of temperature fluctuations. Therefore, it is recommended that a ceramic capacitor with
a temperature coefficient of X5R or above and a maximum capacitance change (resulting from temperature fluctuations)
of ±10% be used. The capacitance should be between 1μF and 1,000μF. (Refer to Fig.28.)
○ BA33E00HFP
1) Vcc1 (Pin 3) and Vcc2 (Pin 2)
Insert capacitors with a capacitance of 1μF between Vcc1 and GND and Vcc2 and GND. The capacitance value will vary
depending on the application. Be sure to implement designs with sufficient margins.
2) Vo1 (Pin 5) and Vo2 (Pin 6)
Insert a capacitor between Vo and GND in order to prevent oscillation. The capacitance of the capacitor may greatly vary
with temperature changes, making it impossible to completely prevent oscillation. Therefore, use a tantalum aluminum
electrolytic capacitor with a low ESR (Equivalent Serial Resistance) that ensures good performance characteristics at low
temperatures. The output oscillates if the ESR is too high or too low. Refer to the ESR characteristics in Fig.29 and
operate the IC within the stable operating region. If there is a sudden load change, use a capacitor with a higher
capacitance. A capacitance between 47μF and 1,000μF is recommended.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
12/16
TSZ02201-0R6R0A600100-1-2
26.Jun.2012 Rev.001
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