参数资料
| 型号： | BA33E00WHFP-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 13/19页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V/ADJ .6A HRP7 |
| 标准包装： | 2,000 |
| 稳压器拓扑结构： | 正，固定式和可调式 |
| 输出电压： | 3.3V，0.8 V ~ 3.3 V |
| 输入电压： | 2.8 V ~ 16 V |
| 电压 - 压降（标准）： | 0.3V @ 300mA |
| 稳压器数量： | 2 |
| 电流 - 输出： | 600mA（最小值） |
| 工作温度： | -25°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 7-SMD |
| 供应商设备封装： | HRP7 |
| 包装： | 带卷 (TR) |
BA3259HFP
BA30E00WHFP
Datasheet
● Operational Notes
1) Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can
break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If
any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices,
such as fuses.
2) GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
3) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
4) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
5) Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
6) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.
7) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic
diode or transistor. For example, the relation between each potential is as follows:
When GND > PIN A and GND > PIN B, the P-N junction operates as a parasitic diode.
When GND > PIN B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
8)Ground wiring patterns
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change
the GND wiring pattern of any external components, either.
9) Thermal Shutdown Circuit (TSD)
This IC incorporates a built-in thermal shutdown circuit for protection against thermal destruction. Should the junction
temperature (Tj) reach the thermal shutdown ON temperature threshold, the TSD will be activated, turning off all output
power elements. The circuit will automatically reset once the chip's temperature Tj drops below the threshold temperature.
Operation of the thermal shutdown circuit presumes that the IC's absolute maximum ratings have been exceeded.
Application designs should never make use of the thermal shutdown circuit.
10) Overcurrent protection circuit
An overcurrent protection circuit is incorporated in order to prevention destruction due to short-time overload currents.
Continued use of the protection circuits should be avoided. Please note that current increases negatively impact the
temperature.
11) Damage to the internal circuit or element may occur when the polarity of the Vcc pin is opposite to that of the other pins
in applications. (I.e. Vcc is shorted with the GND pin while an external capacitor is charged.)
Use a maximum capacitance of 1000 mF for the output pins. Inserting a diode to prevent back-current flow in series with
Vcc or bypass diodes between Vcc and each pin is recommended.
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
13/16
TSZ02201-0R6R0A600100-1-2
26.Jun.2012 Rev.001
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