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| 型号： | BAS116T-7-F |
| 厂商： | Diodes Inc |
| 文件页数： | 1/3页 |
| 文件大小： | 76K |
| 描述： | DIODE SWITCH 85V 150MW SOT523 |
| 产品目录绘图： | SOT-523 Top |
| 标准包装： | 1 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 85V |
| 电流 - 平均整流 (Io)： | 215mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 150mA |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 3µs |
| 电流 - 在 Vr 时反向漏电： | 5nA @ 75V |
| 电容@ Vr, F： | 2pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-523 |
| 供应商设备封装： | SOT-523 |
| 包装： | 标准包装 |
| 产品目录页面： | 1596 (CN2011-ZH PDF) |
| 其它名称： | BAS116T-FDIDKR |
BAS116T, BAW156T,
BAV170T, BAV199T
Document number: DS30258 Rev. 12 - 2
1 of 3
www.diodes.com
March 2009
? Diodes Incorporated
BAS116T, BAW156T,
BAV170T, BAV199T
SURFACE MOUNT LOW LEAKAGE DIODE
Features
?
Ultra-Small Surface Mount Package
?
Very Low Leakage Current
?
Lead Free/RoHS Compliant (Note 2)
?
Qualified to AEC-Q101 Standards for High Reliability
?
"Green" Device (Notes 3 and 4)
Mechanical Data
?
Case: SOT-523
?
Case Material: Molded Plasti
c, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020D
?
Terminals: Solderable per MIL-STD-202, Method 208
?
Lead Free Plating (Matte Tin
Finish annealed over Alloy 42
leadframe).
?
Polarity: See Diagrams Below
?
Marking Information: See Diagrams Below and Page 3
?
Ordering Information: See Page 2
?
Weight: 0.002 grams (approximate)
Top View
BAS116T Marking: 50 BAW156T Marking: 53 BAV170T Marking: 51 BAV199T Marking: 52
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
85
V
RMS Reverse Voltage
VR(RMS)
60
V
Forward Continuous Current (Note 1) Single Diode
Double Diode
IFM
215
125
mA
Repetitive Peak Forward Current
IFRM
500
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0ms
@ t = 1.0s
IFSM
4.0
1.0
0.5
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
PD
150
mW
Thermal Resistance Junction to Ambient Air (Note 1)
RθJA
833
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 5)
V(BR)R
85
?
?
V
IR
= 100
μA
Forward Voltage
VF
?
?
0.90
1.0
1.1
1.25
V
IF
= 1.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
Leakage Current (Note 5)
IR
?
?
5.0
80
nA
nA
VR
= 75V
VR
= 75V, T
j
= 150
°C
Total Capacitance
CT
?
2
?
pF
VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
?
3.0
μs
IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 1. Device mounted on FR-4 PC board with recommended pad
layout, which can be found on
our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our w
ebsite at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb
2O3
Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
SOT-523
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| BAS16HT1G | DIODE 85V 200MA SOD323 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS116TT1G | 功能描述:二极管 - 通用，功率，开关 SS SC75 SWCH DIO 75V TR RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS116TW | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES |
| BAS116TW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BAS116TW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BAS116UDJ | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL SURFACE MOUNT SWITCHING DIODE |
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