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参数资料
| 型号： | BAS21HT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 88K |
| 描述： | DIODE SWITCH 200MA 250V SOD323 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 产品目录绘图： | Rectifer SOD-323 |
| 标准包装： | 10 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 250V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 200mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 50ns |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 200V |
| 电容@ Vr, F： | 5pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 标准包装 |
| 产品目录页面： | 1569 (CN2011-ZH PDF) |
| 其它名称： | BAS21HT1GOSDKR |
?
Semiconductor Components Industries, LLC, 2013
June, 2013 ?
Rev. 10
1
Publication Order Number:
BAS21HT1/D
BAS21HT1G,
NSVBAS21HT1G,
NSVBAS21HT3G
High Voltage
Switching Diode
Features
?
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable
?
These are Pb?Free Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
250
Vdc
Repetitive Peak Reverse Voltage
VRRM
250
Vdc
Peak Forward Current
IF
200
mAdc
Repetitive Peak Forward Current
IFRM
500
mA
Non?Repetitive Peak Forward Surge
Current, 60 Hz
IFSM(surge)
625
mAdc
Non?Repetitive Peak Forward Current
(Square Wave, TJ
= 25
°C prior to
surge)
t = 1 s
t = 10 s
t = 100 s
t = 1 ms
t = 1 s
IFSM
20
20
10
4
1
A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1) TA
= 25
°C
Derate above 25°C
PD
200
1.57
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
635
°C/W
Junction and Storage Temperature
Range
TJ, Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 Minimum Pad
HIGH VOLTAGE
SWITCHING DIODE
Device Package Shipping?
ORDERING INFORMATION
SOD?323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
http://onsemi.com
MARKING
DIAGRAM
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAS21HT1G SOD?323
(Pb?Free)
3000 / Tape & Reel
JS M
1
2
JS = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
NSVBAS21HT1G SOD?323
(Pb?Free)
3000 / Tape & Reel
NSVBAS21HT3G SOD?323
(Pb?Free)
10000 / Tape &
Reel
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS21HT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| BAS21HT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage Switching Diode |
| BAS21J | 制造商:NXP Semiconductors 功能描述:DIODE SWITCH 300V 0.25A SOD323F 制造商:NXP Semiconductors 功能描述:DIODE, SWITCH, 300V, 0.25A, SOD323F 制造商:NXP Semiconductors 功能描述:DIODE, SWITCH, 300V, 0.25A, SOD323F; Diode Type:Fast Recovery; Forward Current If(AV):250mA; Repetitive Reverse Voltage Vrrm Max:300V; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:50ns; Forward Surge Current Ifsm Max:3A;RoHS Compliant: Yes |
| BAS21J T/R | 功能描述:二极管 - 通用，功率，开关 SNGL SWITCHING DIODE RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS21J,115 | 功能描述:二极管 - 通用，功率，开关 SNGL SWITCHING DIODE RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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