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参数资料
| 型号： | BAS21M3T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 91K |
| 描述： | IC DIODE HS SWITCH 250V SOT-723 |
| 产品变化通告： | Copper Wire Change 19/May/2010 |
| 标准包装： | 8,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 250V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 200mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 50ns |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 200V |
| 电容@ Vr, F： | 5pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-723 |
| 供应商设备封装： | SOT-723 |
| 包装： | 带卷 (TR) |
?
Semiconductor Components Industries, LLC, 2014
March, 2014 ?
Rev. 1
Publication Order Number:
BAS21M3/D
1
BAS21M3T5G
High Voltage Switching
Diode
The BAS21M3T5G device is a spin?off of our popular SOT?23
three?leaded
device. It is designed for high voltage switching
applications and is housed in the SOT?723 surface mount package.
This device is ideal for low?power surface mount applications where
board space is at a premium.
Features
?
Reduces Board Space
?
This is a Halide?Free Device
?
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable
?
These are Pb?Free Devices
MAXIMUM RATINGS
(EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
250
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
625
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR?5 Board (Note 1)
TA
= 25
°C
Derate above 25°C
PD
265
2.1
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
470
°C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA
= 25
°C
Derate above 25°C
PD
640
5.1
mW
mW/°C
Thermal Resistance,
Junction?to?Ambient
RJA
195
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
250 V
HIGH VOLTAGE
SWITCHING DIODE
Device Package Shipping?
ORDERING INFORMATION
BAS21M3T5G SOT?723
(Pb?Free)
8000 / Tape &
Reel
SOT?723
CASE 631AA
STYLE 2
MARKING
DIAGRAM
http://onsemi.com
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
AM = Specific Device Code
M = Date Code
AM M
1
3
2
1
3
CATHODE
1
ANODE
NSVBAS21M3T5G SOT?723
(Pb?Free)
8000 / Tape &
Reel
相关PDF资料 |
PDF描述 |
|---|---|
| BAS21T-7-F | DIODE SWITCH 200V 150MW SOT523 |
| BAS29_D87Z | DIODE GEN PURP 120V 200MA SOT23 |
| BAS40-7-F | DIODE SCHOTTKY 40V 350MW SOT23-3 |
| BAS40LP-7 | DIODE SCHOTTKY 40V 2-DFN |
| BAS40LT3G | DIODE SCHOTTKY 200MA 40V SOT-23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS21-MR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:DIODE BAS21 MINIREEL 500PCS |
| BAS21N1PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:FAST SWITCHING DIODE VOLTAGE RANGE 250 Volts CURRENT 200 mAmpere |
| BAS21N3 | 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:High voltage switching diode |
| BAS21PGX | 功能描述:Diode Array 2 Independent Standard 250V 125mA (DC) Surface Mount 5-TSSOP, SC-70-5, SOT-353 制造商:nxp semiconductors 系列:汽车级，AEC-Q101 包装:带卷（TR） 零件状态:有效 二极管配置:2 个独立式 二极管类型:标准 电压 - DC 反向（Vr）（最大值）:250V 电流 - 平均整流（Io）（每二极管）:125mA（DC） 不同 If 时的电压 - 正向（Vf）:1V @ 100mA 速度:小信号 =< 200mA（Io），任意速度 反向恢复时间（trr）:50ns 不同?Vr 时的电流 - 反向漏电流:100nA @ 200V 安装类型:表面贴装 封装/外壳:5-TSSOP，SC-70-5，SOT-353 供应商器件封装:5-TSSOP 标准包装:3,000 |
| BAS21PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:FAST SWITCHING DIODE VOLTAGE RANGE 250 Volts CURRENT 200 mAmpere |
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