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| 型号： | BAS40LT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 88K |
| 描述： | DIODE SCHOTTKY 200MA 40V SOT-23 |
| 产品变化通告： | Wire Change 08/Jun/2009 |
| 标准包装： | 10,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 40V |
| 电流 - 平均整流 (Io)： | 120mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 40mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 1µA @ 25V |
| 电容@ Vr, F： | 5pF @ 1V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
             ? Semiconductor Components Industries, LLC, 2012 November, 2012 ? Rev. 10 1 Publication Order Number: BAS40LT1/D BAS40L, SBAS40L Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Power Dissipation @ TA = 25 °C Derate above 25°C PF 225 1.8 mW mW/°C Operating Junction and Storage Temperature Range TJ, Tstg ?55 to +150 °C Forward Continuous Current IF 120 mA Forward Surge Current t 1 s t 10 ms IFSM 200 600 mA Thermal Resistance (Note 1) Junction?to?Ambient (Note 2) RJA 508 311 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR?4 @ minimum pad. 2. FR?4 @ 1.0 x 1.0 in pad. *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com Device Package Shipping? ORDERING INFORMATION SOT?23 (TO?236) CASE 318 STYLE 8 40 VOLTS SCHOTTKY BARRIER DIODES MARKING DIAGRAM 3 CATHODE 1 ANODE B1 M ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. BAS40LT1G, SBAS40LT1G SOT?23 (Pb?Free) 3,000 / Tape & Reel B1 = Specific Device Code M = Date Code* = Pb?Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. BAS40LT3G, SBAS40LT3G SOT?23 (Pb?Free) 10,000 / Tape & Reel |
相关PDF资料 |
PDF描述 |
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| BAS40SL | DIODE SCHOTTKY 40V 100MA SOD-923 |
| BAS40T-7-F | DIODE SCHOTTKY 40V 200MA SOT523 |
| BAS40W-7-F | DIODE SCHOTTKY 40V 200MW SC70-3 |
| BAS416,115 | DIODE SW LO-LEAK 85V 200MA SC-76 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS40PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere |
| BAS40Q-7-F | 功能描述:Diode Schottky 40V 200mA (DC) Surface Mount SOT-23 制造商:diodes incorporated 系列:汽车级，AEC-Q101 包装:剪切带（CT） 零件状态:有效 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:40V 电流 - 平均整流（Io）:200mA（DC） 不同 If 时的电压 - 正向（Vf）:1V @ 40mA 速度:快速恢复 = 200mA（Io） 反向恢复时间（trr）:5ns 不同?Vr 时的电流 - 反向漏电流:200nA @ 30V 不同?Vr，F 时的电容:5pF @ 0V，1MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23 工作温度 - 结:-55°C ~ 125°C 标准包装:1 |
| BAS40RDW | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODE ARRAYS |
| BAS40S | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SCHOTTKY DIODES |
| BAS40S _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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