参数资料
型号: BAS45AL,115
厂商: NXP Semiconductors
文件页数: 1/11页
文件大小: 98K
描述: DIODE LOW LEAK 125V 250MA SOD80C
标准包装: 2,500
二极管类型: 标准
电压 - (Vr)(最大): 125V
电流 - 平均整流 (Io): 250mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 100mA
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 1.5µs
电流 - 在 Vr 时反向漏电: 1nA @ 125V
电容@ Vr, F: 4pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-80C
供应商设备封装: LLDS; MiniMelf
包装: 带卷 (TR)
1. Product profile
1.1 General description
Epitaxial medium-speed switching diode with a low leakage current, encapsulated in a
small hermetically sealed glass SOD80C
Surface-Mounted Device (SMD) package.
1.2 Features and benefits
Continuous reverse voltage: max. 125 V
Repetitive peak forward current: max. 625 mA
Low reverse current: max. 1 nA
Switching time: typ. 1.5
μs
1.3 Applications
Low leakage current applications
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2. Pinning information
[1] The marking band indicates the cathode.
BAS45AL
Low-leakage diode
Rev. 5 — 6 August 2010 Product data sheet
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
forward current
[1]
--250mA
VR
reverse voltage - - 125 V
VF
forward voltage IF
= 100 mA - - 1000 mV
Table 2. Pinning
Pin
Description
Simplified outline
Graphic symbol
1 cathode
[1]
2 anode
ka1
006aab040
2
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