参数资料
型号: BAS45AL,115
厂商: NXP Semiconductors
文件页数: 10/11页
文件大小: 98K
描述: DIODE LOW LEAK 125V 250MA SOD80C
标准包装: 2,500
二极管类型: 标准
电压 - (Vr)(最大): 125V
电流 - 平均整流 (Io): 250mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 1V @ 100mA
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 1.5µs
电流 - 在 Vr 时反向漏电: 1nA @ 125V
电容@ Vr, F: 4pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: SOD-80C
供应商设备封装: LLDS; MiniMelf
包装: 带卷 (TR)
BAS45AL All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 5 — 6 August 2010 8 of 11
NXP Semiconductors
BAS45AL
Low-leakage diode
12. Revision history
Table 9. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAS45AL v.5 20100806 Product
data sheet - BAS45AL_4
Modifications:
?
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
?
Legal texts have been adapted to the new company name where appropriate.
?
Table 1 “Quick reference data”: added
?
Section 4 “Marking”: added
?
Figure 7: superseded by minimized package outline drawing
?
Section 10 “Packing information”: added
?
Section 11 “Soldering”: added
?
Section 13 “Legal information”: updated
BAS45AL_4 19990528 Product specification - BAS45AL_3
BAS45AL_3 19990504 Product specification - BAS45AL_2
BAS45AL_2 19960313 Product specification - BAS45AL_1
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