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参数资料
| 型号： | BAS21SLT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 93K |
| 描述： | DIODE SWITCH DUAL 250V SOT23 |
| 产品目录绘图： | Rectifier SOT-23, SOT-23S |
| 标准包装： | 1 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.25V @ 200mA |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 225mA（DC） |
| 电压 - (Vr)（最大）： | 250V |
| 反向恢复时间(trr)： | 50ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对串联 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1569 (CN2011-ZH PDF) |
| 其它名称： | BAS21SLT1GOSDKR |
?
Semiconductor Components Industries, LLC, 2013
January, 2013 ?
Rev. 6
1
Publication Order Number:
BAS21SLT1/D
BAS21SLT1G,
NSVBAS21SLT1G
Dual Series High Voltage
Switching Diode
Features
?
Moisture Sensitivity Level: 1
?
ESD Rating ?
Human Body Model: Class 1
ESD Rating
?
Machine Model: Class B
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
?
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
250
Vdc
Repetitive Peak Reverse Voltage
VRRM
250
Vdc
Peak Forward Current
IF
225
mAdc
Peak Forward Surge Current
IFM(surge)
625
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board
(Note 1)
TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient
RJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA
= 25
°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
Junction to Ambient
RJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
?55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
Device Package Shipping?
ORDERING INFORMATION
SOT?23
CASE 318
STYLE 11
MARKING DIAGRAM
1
2
3
3
CATHODE/ANODE
ANODE
1
CATHODE
2
http://onsemi.com
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAS21SLT1G SOT?23
(Pb?Free)
3000 / Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
JT M
JT = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
NSVBAS21SLT1G SOT?23
(Pb?Free)
3000 / Tape & Reel
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BAS21SRF | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:225mW SMD Switching Diode |
| BAS21SRFG | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:225mW SMD Switching Diode |
| BAS21ST | 功能描述:二极管 - 通用，功率，开关 200mA 250V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS21S-TP | 功能描述:二极管 - 通用，功率，开关 200mA 250V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BAS21SW | 制造商:NXP Semiconductors 功能描述:DIODE SWITCHING 250V 0.25A SOT323 制造商:NXP Semiconductors 功能描述:DIODE, SWITCHING, 250V, 0.25A, SOT323 制造商:NXP Semiconductors 功能描述:DIODE, SWITCHING, 250V, 0.25A, SOT323; Diode Type:Switching; Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:250V; Forward Current If(AV):225mA; Forward Voltage VF Max:1.25V; Reverse Recovery Time trr Max:50ns ;RoHS Compliant: Yes |
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