参数资料
型号: BAS521,315
厂商: NXP Semiconductors
文件页数: 4/11页
文件大小: 110K
描述: DIODE SW 300V 250MA H-S SOD523
标准包装: 8,000
二极管类型: 标准
电压 - (Vr)(最大): 300V
电流 - 平均整流 (Io): 250mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 1.1V @ 100mA
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 50ns
电流 - 在 Vr 时反向漏电: 150nA @ 250V
电容@ Vr, F: 5pF @ 0V,1MHz
安装类型: 表面贴装
封装/外壳: SC-79,SOD-523
供应商设备封装: SOD-523
包装: 带卷 (TR)
BAS521 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 2 — 5 November 2010 2 of 11
NXP Semiconductors
BAS521
Single high-voltage switching diode
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
5. Limiting values
[1] Tsp
is the solder point temperature at the soldering point of the cathode tab.
[2] Tj
=25°C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
Table 2. Pinning
Pin
Description
Simplified outline
Graphic symbol
1 cathode
[1]
2 anode
2
1
006aab040
2
1
Table 3. Ordering information
Type number
Package
Name
Description
Version
BAS521 SC-79 plastic surface-mounted package; 2 leads SOD523
Table 4. Marking codes
Type number
Marking code
BAS521 L4
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage - 300 V
VRRM
repetitive peak reverse
voltage
-300V
IF
forward current Tsp
90
°C
[1]
250 mA
IFRM
repetitive peak forward
current
tp
=1ms;
δ
=0.25
-1A
IFSM
non-repetitive peak forward
square wave;
current
tp
=1μs
[2]
-4.5A
Ptot
total power dissipation Tsp
90
°C
[1][3]
-500mW
Tj
junction temperature - 150
°C
Tamb
ambient temperature
?65 +150
°C
Tstg
storage temperature
?65 +150
°C
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