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参数资料
| 型号： | BAT54XV2T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 90K |
| 描述： | DIODE SCHOTTKY DET/SW 30V SOD523 |
| 产品变化通告： | Copper Wire Change 19/May/2010 |
| 标准包装： | 8,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 800mV @ 100mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 5ns |
| 电流 - 在 Vr 时反向漏电： | 2µA @ 25V |
| 电容@ Vr, F： | 10pF @ 1V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-79，SOD-523 |
| 供应商设备封装： | SOD-523 |
| 包装： | 带卷 (TR) |
?
Semiconductor Components Industries, LLC, 2013
February, 2013 ?
Rev. 8
1
Publication Order Number:
BAT54XV2T1/D
BAT54XV2T1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high?speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand?held and portable
applications where space is limited.
Features
?
Extremely Fast Switching Speed
?
Low Forward Voltage ?
0.35 V (Typ) @ I
F
= 10 mA
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC?Q101 Qualified and
PPAP Capable
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TJ
= 125
°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1) TA
= 25
°C
Derate above 25°C
PD
200
1.57
mW
mW/°C
Forward Current (DC)
IF
200 Max
mA
Non?Repetitive Peak Forward
Current, tp
< 10 msec
IFSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
IFRM
300
mA
Thermal Resistance,
Junction?to?Ambient
RJA
635
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to 125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?4 Minimum Pad.
30 VOLT
SILICON HOT?CARRIER
DETECTOR AND SWITCHING
DIODES
1
CATHODE
2
ANODE
http://onsemi.com
SOD?523
CASE 502
PLASTIC
1
2
1
Device Package Shipping?
ORDERING INFORMATION
MARKING DIAGRAM
BAT54XV2T1G SOD?523
(Pb?Free)
3000 / Tape &
Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
JV = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
JVM
BAT54XV2T5G SOD?523
(Pb?Free)
8000 / Tape &
Reel
SBAT54XV2T1G SOD?523
(Pb?Free)
3000 / Tape &
Reel
相关PDF资料 |
PDF描述 |
|---|---|
| BAT54XV2 | DIODE SCHOTTKY 30V 200MA SOD523F |
| BAT720,215 | DIODE SCHOTTKY 40V 500MA SOT-23 |
| BAT750-7-F | DIODE SCHOTTKY 40V 750MA SOT23-3 |
| BAT750TA | DIODE SCHOTTKY 40V 750MA SOT23-3 |
| BAT760,115 | DIODE SCHOTTKY 20V 1A SOD323 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BAT54XY | 制造商:NXP Semiconductors 功能描述: 制造商:NXP Semiconductors 功能描述:0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE |
| BAT54XY,115 | 功能描述:肖特基二极管与整流器 SCHOTTKY 30V 200MA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| BAT54XY115 | 制造商:NXP Semiconductors 功能描述:SWITCHING DIODE 30V SOT-363 制造商:NXP Semiconductors 功能描述:DIODE DUAD SKY 30V 0.2A SOT363 |
| BAT54XYH | 功能描述:DIODE ARRAY SCHOTTKY 30V SC-88 制造商:nexperia usa inc. 系列:汽车级，AEC-Q101 包装:剪切带（CT） 零件状态:在售 二极管配置:2 对串联 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:30V 电流 - 平均整流（Io）（每二极管）:200mA（DC） 不同 If 时的电压 - 正向（Vf:800mV @ 100mA 速度:小信号 =< 200mA（Io），任意速度 不同?Vr 时的电流 - 反向漏电流:2μA @ 25V 工作温度 - 结:125°C（最大） 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商器件封装:SC-88（SOT-363） 标准包装:1 |
| BAT54-Y | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Automotive small signal Schottky diodes |
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