- 您现在的位置：买卖IC网 > PDF目录166400 > BC847B-13 (DIODES INC) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | BC847B-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 72K |
| 代理商： | BC847B-13 |
DS11108 Rev. 17 - 2
2 of 4
BC846A-BC848C
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage (Note 4)
BC846
BC847
BC848
V(BR)CBO
80
50
30
—
V
IC = 10
mA, IB = 0
Collector-Emitter Breakdown Voltage (Note 4) BC846
BC847
BC848
V(BR)CEO
65
45
30
—
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
BC846, BC847
(Note 3)
BC848
V(BR)EBO
6
5
——
V
IE = 1
mA, IC = 0
H-Parameters
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
A
Current Gain Group
B
C
hfe
hie
hoe
hre
—
220
330
600
2.7
4.5
8.7
18
30
60
1.5x10-4
2x10-4
3x10-4
—
k
W
k
W
k
W
S
—
VCE = 5.0V, IC = 2.0mA,
f = 1.0kHz
DC Current Gain
Current Gain Group A
B
(Note 4)
C
hFE
110
200
420
180
290
520
220
450
800
—
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage (Note 4)
VCE(SAT)
—
90
200
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 4)
VBE(SAT)
—
700
900
—mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage (Note 4)
VBE(ON)
580
—
660
—
700
770
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
Collector-Cutoff Current (Note 4)
BC846
BC847
BC848
ICES
ICBO
—
15
5.0
nA
A
VCE = 80V
VCE = 50V
VCE = 30V
VCB = 40V
VCB = 30V, TA = 150°C
Gain Bandwidth Product
fT
100
300
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
Collector-Base Capacitance
CCBO
—
3.0
—
pF
VCB = 10V, f = 1.0MHz
Noise Figure
NF
—
2
10
dB
VCE = 5V, IC = 200A,
RS = 2.0k
W,
f = 1.0kHz,
Df = 200Hz
Notes:
4. Short duration pulse test used to minimize self-heating effect.
相关PDF资料 |
PDF描述 |
|---|---|
| BC848B-13 | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| BC857AW-13 | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| BC857A | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| BC879,112 | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| BCL-112-PL | COPPER ALLOY, TIN FINISH, WIRE TERMINAL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BC847B-13-F | 功能描述:二极管 - 通用，功率，开关 NPN Small SIG 50V 45V VCEO 6.0V VEBO RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| BC847B-1F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS |
| BC847B215 | 制造商:NXP Semiconductors 功能描述:BIPOLAR TRANSISTOR NPN 45V 100MA 3-S |
| BC847B-7 | 功能描述:两极晶体管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BC847B-7-F | 功能描述:两极晶体管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。