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参数资料
| 型号： | BC857A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 170K |
| 代理商： | BC857A |
www.vishay.com
2
Document Number 85135
Rev. 1.2, 08-Sep-04
VISHAY
BC856 to BC859
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout on third page.
Maximum Thermal Resistance
1) Device on fiberglass substrate, see layout on third page.
Electrical DC Characteristics
Parameter
Test condition
Part
Symbol
Value
Unit
Collector - base voltage
BC856
- VCBO
80
V
BC857
- VCBO
50
V
BC858
- VCBO
30
V
BC859
- VCBO
30
V
Collector - emitter voltage
(base shorted)
BC856
- VCES
80
V
BC857
- VCES
50
V
BC858
- VCES
30
V
BC859
- VCES
30
V
Collector - emitter voltage
(base open)
BC856
- VCEO
65
V
BC857
- VCEO
45
V
BC858
- VCEO
30
V
BC859
- VCEO
30
V
Emitter - base voltage
- VEBO
5V
Collector current
- IC
100
mA
Peak colector current
- ICM
200
mA
Peak base current
- IBM
200
mA
Peak emitter current
IEM
200
mA
Power dissipation
Tamb = 25 °C
Ptot
3101)
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RθJA
3201)
°C/W
Thermal resistance junction to
substrate backside
RθSB
4501)
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 65 to + 150
°C
Parameter
Test condition
Part
Symbol
Min
Typ
Max
Unit
Small signal current gain
(current gain group A)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hfe
220
Small signal current gain
(current gain group B)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hfe
330
Small signal current gain
(current gain group C)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hfe
600
Input impedance (current gain
group A)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hie
1.6
2.7
4.5
k
Input impedance (current gain
group B)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hie
3.2
4.5
8.5
k
Input impedance (current gain
group C)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hie
68.7
15
k
Output admittance (current gain
group A)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hoe
18
30
S
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相关代理商/技术参数 |
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| BC857A _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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| BC857A RFG | 功能描述:TRANSISTOR, PNP, -45V, -0.1A, 12 制造商:taiwan semiconductor corporation 系列:- 包装:带卷（TR） 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:100mA 电压 - 集射极击穿（最大值）:45V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:650mV @ 5mA，100mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:125 @ 2mA，5V 功率 - 最大值:200mW 频率 - 跃迁:100MHz 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23 标准包装:3,000 |
| BC857A T/R | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BC857A,215 | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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