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参数资料
| 型号： | BC857A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 170K |
| 代理商： | BC857A |
VISHAY
BC856 to BC859
Document Number 85135
Rev. 1.2, 08-Sep-04
Vishay Semiconductors
www.vishay.com
3
Output admittance (current gain
group B)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hoe
30
60
S
Output admittance (current gain
group C)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hoe
60
110
S
Reverse voltage transfer ratio
(current gain group A)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hre
1.5 x 10-4
Reverse voltage transfer ratio
(current gain group B)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hre
2 x 10-4
Reverse voltage transfer ratio
(current gain group C)
- VCE = 5 V, - IC = 2 mA, f = 1 kHz
hre
3 x 10-4
DC current gain (current gain
group A)
- VCE = 5 V, - IC = 10 AhFE
90
DC current gain (current gain
group B)
- VCE = 5 V, - IC = 10 AhFE
150
DC current gain (current gain
group C)
- VCE = 5 V, - IC = 10 AhFE
270
DC current gain (current gain
group A)
- VCE = 5 V, - IC = 2 mA
hFE
110
180
220
DC current gain (current gain
group B)
- VCE = 5 V, - IC = 2 mA
hFE
200
290
450
DC current gain (current gain
group C)
- VCE = 5 V, - IC = 2 mA
hFE
420
520
800
Collector saturation voltage
- IC = 10 mA, - IB = 0.5 mA
VCEsat
90
300
mV
- IC = 100 mA, - IB = 5 mA
VCEsat
250
650
mV
Base saturation voltage
- IC = 10 mA, - IB = 0.5 mA
VBEsat
700
mV
- IC = 100 mA, - IB = 5 mA
VBEsat
900
mV
Base - emiter voltage
- VCE = 5 V, - IC = 2 mA
VBE
600
660
750
mV
- VCE = 5 V, - IC = 10 mA
VBE
820
mV
Collector-emitter cut-off current
- VCE = 80 V
BC856
ICES
0.2
15
nA
- VCE = 50 V
BC857
ICES
0.2
15
nA
- VCE = 30 V
BC858
ICES
0.2
15
nA
BC859
ICES
0.2
15
nA
- VCE = 80 V, Tj = 125 °C
BC857
ICES
4
A
- VCE = 50 V, Tj = 125 °C
BC857
ICES
4
A
- VCE = 30 V, Tj = 125 °C
BC858
ICES
4
A
BC859
ICES
4
A
Collector-base cut-off current
- VCB = 30 V
ICBO
15
A
- VCB = 30 V, Tj = 150 °C
ICBO
5
A
Parameter
Test condition
Part
Symbol
Min
Typ
Max
Unit
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BC857A _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BC857A RF | 制造商:SKMI/Taiwan 功能描述:Trans GP BJT PNP 45V 0.1A 3-Pin SOT-23 T/R |
| BC857A RFG | 功能描述:TRANSISTOR, PNP, -45V, -0.1A, 12 制造商:taiwan semiconductor corporation 系列:- 包装:带卷（TR） 零件状态:在售 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:100mA 电压 - 集射极击穿（最大值）:45V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:650mV @ 5mA，100mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:125 @ 2mA，5V 功率 - 最大值:200mW 频率 - 跃迁:100MHz 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23 标准包装:3,000 |
| BC857A T/R | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| BC857A,215 | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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