参数资料
| 型号： | BD00C0AWFP-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 14/21页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ 1A TO252-5 |
| 标准包装： | 2,000 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 3 V ~ 15 V |
| 输入电压： | 4 V ~ 25 V |
| 电压 - 压降（标准）： | 0.3V @ 500mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 1A（最小值） |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-5，DPak（4 引线 + 接片），TO-252AD |
| 供应商设备封装： | * |
| 包装： | 带卷 (TR) |
BD00C0AWxx series
Datasheet
17. In some applications, the V CC and pin potential might be reversed, possibly resulting in circuit internal damage or damage
to the elements. For example, while the external capacitor is charged, the V CC shorts to the GND. Use a capacitor with a
capacitance with less than 1000 μ F. We also recommend using reverse polarity diodes in series or a bypass between all
pins and the V CC pin.
18. This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of
parasitic elements.
For example, in case a resistor and a transistor are connected to the pins as shown in the figure below then:
○ The P/N junction functions as a parasitic diode when GND > pin A for the resistor, or GND > pin B for the transistor.
○ Also, when GND > pin B for the transistor (NPN), the parasitic diode described above combines with the N layer of the
other adjacent elements to operate as a parasitic NPN transistor.
Parasitic diodes inevitably occur in the structure of the IC. Their operation can result in mutual interference between
circuits and can cause malfunctions and, in turn, physical damage to or destruction of the chip. Therefore do not employ
any method in which parasitic diodes can operate such as applying a voltage to an input pin that is lower than the
(P substrate) GND.
www.rohm.com
? 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
14/18
TSZ02201-0T2T0AZ00060-1-2
08.Feb.2013 Rev.001
相关PDF资料 |
PDF描述 |
|---|---|
| BD00D0AWHFP-TR | IC REG LDO ADJ 2A HRP5 |
| BD00GA3WEFJ-E2 | IC REG LDO ADJ .3A 8-HTSOP |
| BD00GA5WEFJ-E2 | IC REG LDO ADJ .5A 8-HTSOP |
| BD00GC0WEFJ-E2 | IC REG LDO ADJ 1A 8-HTSOP |
| BD00HA3WEFJ-E2 | IC REG LDO ADJ .3A 8-HTSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BD00C0AWFPS-M | 制造商:ROHM 制造商全称:Rohm 功能描述:Single-Output LDO Regulator 35V Voltage Resistance 1A LDO Regulator |
| BD00C0AWFPS-ME2 | 制造商:ROHM 制造商全称:Rohm 功能描述:Single-Output LDO Regulator 35V Voltage Resistance 1A LDO Regulator |
| BD00C0AWHFP-CTR | 功能描述:35V VOLTAGE RESISTANCE 1A LDO RE 制造商:rohm semiconductor 系列:汽车级，AEC-Q100 包装:剪切带（CT） 零件状态:在售 输出配置:正 输出类型:可调式 稳压器数:1 电压 - 输入（最大值）:26.5V 电压 - 输出（最小值/固定）:1V 电压 - 输出（最大值）:15V 压降（最大值）:0.5V @ 500mA 电流 - 输出:1A 电流 - 电源（最大值）:50μA PSRR:55dB（120Hz） 控制特性:使能 保护功能:过流，超温 工作温度:-40°C ~ 125°C（TA） 安装类型:表面贴装 封装/外壳:TO-263-6，D2Pak（5 引线 + 接片），TO-263BA 供应商器件封装:HRP-5 标准包装:1 |
| BD00D0AWHFP | 制造商:ROHM 制造商全称:Rohm 功能描述:Low ESR capacitor,2A Low Dropout Voltage Regulator with Shut Down Switch（Adjustable Voltage） |
| BD00D0AWHFP_11 | 制造商:ROHM 制造商全称:Rohm 功能描述:2A Standard Variable Output LDO Regulator |
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