参数资料
| 型号： | BD3509MUV-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 2/21页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ 4A 20QFN |
| 标准包装： | 2,500 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 0.65 V ~ 2.7 V |
| 输入电压： | 0.7 V ~ 5.5 V |
| 电压 - 压降（标准）： | 0.028V @ 1A |
| 稳压器数量： | 1 |
| 电流 - 输出： | 4A（最小） |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VFQFN 裸露焊盘 |
| 供应商设备封装： | VQFN020V4040 |
| 包装： | 带卷 (TR) |
BD3508MUV,BD3509MUV
● Absolute Maximum Ratings (Ta=100 ℃ )
BD3508MUV / BD3509MUV
Technical Note
Parameter
Input Voltage 1
Input Voltage 2
Symbol
VCC
VIN
Ratings
BD3508MUV BD3509MUV
6.0 * 1
6.0 * 1
Unit
V
V
Input Voltage 3
VDD
-
6.0* 1
V
Enable Input Voltage
Power Good Input Voltage
Power Dissipation 1
Power Dissipation 2
Power Dissipation 3
Power Dissipation 4
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Ven
V PGOOD
Pd1
Pd2
Pd3
Pd4
Topr
Tstg
Tjmax
6.0
- 6.0
0.34 *2
0.70 *3
1.21 *4
3.56 *5
-10 ~ +100
-55 ~ +125
+150
V
V
W
W
W
W
℃
℃
℃
*1 Should not exceed Pd.
*2 Reduced by 4mW/ ℃ for each increase in Ta ≧ 25 ℃ (no heat sink)
*3 1 layer, mounted on a board 74.2mm × 74.2mm × 1.6mm Glass-epoxy PCB (Copper foil area : 10.29mm 2 )
*4 4 layers, mounted on a board 74.2mm × 74.2mm × 1.6mm Glass-epoxy PCB (Copper foil area : 10.29mm 2 ) , copper foil in each layers.
*5 4 layers, mounted on a board 74.2mm × 74.2mm × 1.6mm Glass-epoxy PCB (Copper foil area : 5505mm 2 ) , copper foil in each layers.
● Operating Conditions(Ta=25 ℃ )
Parameter
Input Voltage 1
Input Voltage 2
Symbol
VCC
VIN
BD3508MUV
Min Max
4.3 5.5
0.75 VCC-1 * 6
BD3509MUV
Min Max
4.3 5.5
0.7 VCC-1 * 6
Unit
V
V
Input Voltage 3
Output Voltage setting Range
Enable Input Voltage
VDD
Vo
Ven
-
VFB
-0.3
-
2.7
5.5
2.7
VFB
-0.3
5.5
2.7
5.5
V
V
V
NRCS capacity
CNRCS
0.001 1
0.001 1
μF
*6 VCC and VIN do not have to be implemented in the order listed.
★ This product is not designed for use in radioactive environments.
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
2/20
2010.04 - Rev.C
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