参数资料
| 型号： | BD3512MUV-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/17页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ 3A 20QFN |
| 标准包装： | 2,500 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 0.65 V ~ 2.7 V |
| 输入电压： | 0.7 V ~ 5.5 V |
| 电压 - 压降（标准）： | 0.065V @ 1A |
| 稳压器数量： | 1 |
| 电流 - 输出： | 3A（最小） |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VFQFN 裸露焊盘 |
| 供应商设备封装： | VQFN020V4040 |
| 包装： | 带卷 (TR) |
TECHNICAL NOTE
High-performance Regulator IC Series for PCs
Ultra Low Dropout
Linear Regulators for PC Chipsets
with Power Good
BD3512MUV
(3A)
● Description
The BD3512MUV ultra low-dropout linear chipset regulator operates from a very low input supply, and offers ideal
performance in low input voltage to low output voltage applications. It incorporates a built-in N-MOSFET power transistor to
minimize the input-to-output voltage differential to the ON resistance (R ON =100m Ω ) level. By lowering the dropout voltage in
this way, the regulator realizes high current output (Iomax=3.0A) with reduced conversion loss, and thereby obviates the
switching regulator and its power transistor, choke coil, and rectifier diode. Thus, the BD3512MUV is designed to enable
significant package profile downsizing and cost reduction. An external resistor allows the entire range of output voltage
configurations between 0.65 and 2.7V, while the NRCS (soft start) function enables a controlled output voltage ramp-up,
which can be programmed to whatever power supply sequence is required.
● Features
1) Internal high-precision reference voltage circuit (0.65V ± 1%)
2) Built-in VCC undervoltage lockout circuit (VCC=3.80V)
3) NRCS (soft start) function reduces the magnitude of in-rush current
4) Internal Nch MOSFET driver offers low ON resistance (65m Ω typ)
5) Built-in current limit circuit (3.0A min)
6) Built-in thermal shutdown (TSD) circuit (Timer latch)
7) Variable output (0.65 ～ 2.7V)
8) High-power package VQFN020V4040 : 4.0 × 4.0 × 1.0(mm)
9) Tracking function
● Applications
Notebook computers, Desktop computers, LCD-TV, DVD, Digital appliances
Oct. 2008
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