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参数资料
| 型号： | BD6210HFP-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 15/21页 |
| 文件大小： | 0K |
| 描述： | IC H-BRIDGE DVR 7V 1CH .5A HRP7 |
| 特色产品： | H-Bridge Driver IC |
| 标准包装： | 1 |
| 应用： | 直流电机驱动器 |
| 输出数： | 1 |
| 电流 - 输出： | 500mA |
| 电源电压： | 3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-8，D²Pak（7 引线+接片），TO-263CA |
| 供应商设备封装： | HRP7 |
| 包装： | 标准包装 |
| 其它名称： | BD6210HFP-DKR BD6210HFP-DKR-ND BD6210HFPDKR |
BD621xxx Series
Datasheet
12) Regarding the input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
B
Pin B
Pin A
E
N
P +
N
P
P +
N
Parasitic
element
N
P +
N
P
P +
N
B
C
E
P substrate
P substrate
Parasitic
Parasitic element
GND
Parasitic element
GND
GND
GND element
Other adjacent elements
Fig.41 Example of monolithic IC structure
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
15/18
TSZ02201-0P2P0B300070-1-2
25.Dec.2012 Rev.002
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