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| 型号： | BD6583MUV-AE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 14/35页 |
| 文件大小： | 0K |
| 描述： | IC LED DRIVER WHIT BCKLGT 24VQFN |
| 标准包装： | 1 |
| 拓扑： | PWM，升压（升压） |
| 输出数： | 6 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 背光 |
| 类型 - 次要： | 白色 LED |
| 频率： | 800kHz ~ 1.2MHz |
| 电源电压： | 2.7 V ~ 22 V |
| 输出电压： | 43V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-VFQFN 裸露焊盘 |
| 供应商设备封装： | VQFN024V4040 |
| 包装： | 标准包装 |
| 工作温度： | -30°C ~ 85°C |
| 产品目录页面： | 1372 (CN2011-ZH PDF) |
| 其它名称： | BD6583MUV-ADKR BD6583MUV-ADKR-ND BD6583MUV-AE2DKR |
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BD6583MUV-A
Datasheet
Ton=(Iave × (1-VIN/VOUT) × (1/fsw) × (L/VIN) × 2)
4) External SBD open detect and over voltage protection
BD6583MUV-A has over boost protection by external SBD open and over voltage protection. It detects VDET voltage
and is stopped output Tr in abnormal condition. Details are as shown below.
? External SBD open detect
In the case of external SBD is not connected to IC, the coil or external Tr may be destructed. Therefore, at such an error
as VOUT becoming 0.1V or below, the Under Detector shown in the figure works, and turns off the output Tr, and
prevents the coil and the IC from being destructed.
And the IC changes from activation into non-activation, and current does not flow to the coil (0mA).
? Over voltage protection
At such an error of output open as the output DC/DC and the LED is not connected to IC, the DC/DC will boost too much
and the VDET terminal exceed the absolute maximum ratings, and may destruct the IC. Therefore, when VDET
becomes sensing voltage or higher, the over voltage limit works, and turns off the output Tr, and the pressure up made
stop.
At this moment, the IC changes from activation into non-activation, and the output voltage goes down slowly. And, when
the output voltage becomes the hysteresis of the over voltage limit or below, the output voltage pressure up to sensing
voltage once again and unless the application error is recovered, this operation is repeated.
5) Thermal shut down
BD6583MUV-A has thermal shut down function.
The thermal shut down works at 175 ° C or higher, and the IC changes from activation into non-activation. Because
non-activation is different from RSTB=L, it doesn’t’ be reset inside IC. Moreover, even if thermal shut down function
works, soft start, FAILSEL, selection the number of LED lines of the current driver and starting current setting at
PWMDRV=L related RSTB are hold.
6) Over Current Limit
Over current flows the current detection resistor that is connected to switching transistor source and between GND,
SENSP pin voltage turns more than detection voltage, over current protection is operating and it is prevented from
flowing more than detection current by reducing ON duty of switching Tr without stopping boost.
As over current detector of BD6583MUV-A is detected peak current, current more than over current setting value does not flow.
And, over current value can decide freely by changing over current detection voltage.
<Derivation sequence of detection resistor>
Detection resistor =Over current detection voltage / Over current setting value
TYP value of over current detection voltage is 100mV, MIN = 70mV and MAX = 130mV and after the current value which
was necessary for the normal operation was decided, detection resistor is derived by using MIN value of over current
detection value.
For example, detection resistor when necessary current value was set at 1A is given as shown below.
Detection resistor =70mV / 1A = 70m ?
MAX current dispersion of this detection resistor value is
MAX current = 130mV / 70m ? = 1.86A
<The estimate of the current value which need for the normal operation>
As over current detector of BD6583MUV-A is detected the peak current, it have to estimate peak current to flow to the coil
by operating condition.
In case of, ○ Supply voltage of coil = VIN
○ Inductance value of coil = L
○ Switching frequency = fsw MIN=0.8MHz, Typ=1MHz, MAX=1.2MHz
○ Output voltage = VOUT
○ Total LED current = IOUT
○ Average current of coil = Iave
○ Peak current of coil = Ipeak
○ Efficiency = eff (Please set up having margin, it refers to data on P.7)
○ ON time of switching transistor = Ton
Ipeak = (VIN / L) × (1 / fsw) × (1-(VIN / VOUT))
Iave=(VOUT × IOUT / VIN) / eff
1/2
Each current is calculated.
As peak current varies according to whether there is the direct current superposed, the next is decided.
(1-VIN/VOUT) × (1/fsw) < Ton ? peak current = Ipeak /2 + Iave
(1-VIN/VOUT) × (1/fsw) > Ton ? peak current = Ipeak
(Example 1)
In case of, VIN=6.5V, L=4.7μH, fsw=1MHz, VOUT=39V, IOUT=80mA, Efficiency=85%
Ipeak = (6.0V / 4.7μH) × (1 / 1MHz) × (1-(6.0V / 39V)) =1.08A
Ton = (0.61A × (1-6.0V / 39V) × (1 / 1MHz) × ( 4.7μH /6.0V) × 2)
Iave = (39V × 80mA / 6.0V) / 85% = 0.61A
(1-VIN/VOUT) × (1/fsw)=0.85μs < Ton
Peak current = 1.08A/2+0.61A = 1.15A
1/2
= 0.90μs
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
14/32
TSZ02201-0G3G0C400180-1-2
03.Dec.2012 Rev.001
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