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参数资料
| 型号： | BD9533EKN-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 12/23页 |
| 文件大小： | 0K |
| 描述： | IC REG SW VAR SOFT START 20-HQFN |
| 标准包装： | 1 |
| 系列： | H³Reg™ |
| 应用： | 转换器，DDR SDRAM |
| 输入电压： | 4.5 V ~ 28 V |
| 输出数： | 1 |
| 输出电压： | 0.7 V ~ 2 V |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VFQFN 裸露焊盘 |
| 供应商设备封装： | 20-HQFN |
| 包装： | 标准包装 |
| 产品目录页面： | 1373 (CN2011-ZH PDF) |
| 其它名称： | BD9533EKN-E2DKR |
4. MOSFET Selection
Loss on the main MOSFET
V IN
Pmain=P RON +P GATE +P TRAN
main switch
V IN × Crss × I OUT × f
L
V OUT
=
V OUT
V IN
× R ON × I OUT 2 +Ciss × f × V DD +
2
I DRIVE
??? (11)
Co
(Ron: On-resistance of FET; Ciss: FET gate capacity;
f: Switching frequency Crss: FET inverse transfer function;
I DRIVE : Gate peak current)
synchronous switch
Loss on the synchronous MOSFET
Psyn=P RON +P GATE
5. Setting Detection Resistance
=
V IN -V OUT
V IN
× R ON × I OUT 2 +Ciss × f × V DD ??? (12)
V IN
The over current protection function detects the output ripple
current peak value. This parameter (setting value) is
determined as in formula (13) below.
L
I L
R
Co
V OUT
I LMIT =
V ILIM × 0.1
R
[A] ??? (13)
(V ILIM : ILIM voltage; R: Detection resistance)
Current limit
When the over current protection is detected by DCR of coil L, this
V IN
I L
parameter (setting value) is determined as in formula (14) below.
(Application circuit:P20)
L
R L
V OUT
I LMIT =V ILIM × 0.1 ×
r × C
L
[A] ??? (14)
r
C
Co
(RL=
L
r × C
)
Current limit
(V ILIM :ILIM voltage
12/20
RL: the DCR value of coil)
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