参数资料
| 型号： | BD95513MUV-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 16/20页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK ADJ 3A 32VQFN |
| 标准包装： | 1 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.7 V ~ 5 V |
| 输入电压： | 4.5 V ~ 28 V |
| PWM 型： | 混合物 |
| 频率 - 开关： | 200kHz ~ 600kHz |
| 电流 - 输出： | 3A |
| 同步整流器： | 无 |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-VFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 供应商设备封装： | VQFN032V5050 |
| 产品目录页面： | 1373 (CN2011-ZH PDF) |
| 其它名称： | BD95513MUV-E2DKR |
BD95513MUV
Technical Note
(11) Regarding IC input pins
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
PN junctions are formed at the intersection of these P layers with the N layers of other elements, creating parasitic diodes
and/or transistors. For example (refer to the figure below):
When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode
When GND > Pin B, the PN junction operates as a parasitic transistor
Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistance
Transistor (NPN)
Pin A
Pin A
Pin B
C
B
E
Pin B
N
P
+
N
P
P +
N
N
P +
N
N
P
P
+
N
B
C
E
P Substrate
P Substrate
Parasitic Elements
Parasitic Element
GND
Parasitic Element
Parasitic Elements
Example of IC Structure
GND
GND
GND
Other Adjacent Elements
(12) Ground wiring traces
When using both small-signal and large-current GND traces, the two ground traces should be routed separately but
connected to a single ground potential within the application in order to avoid variations in the small-signal ground caused
by large currents. Also ensure that the GND traces of external components do not cause variations on GND voltage.
● Power Dissipation
5.5
(with 20.2 mm copper thermal pad)
(with 20.2 mm pad on top layer, 5502 mm pad on layers 2,3)
IC mounted on 4-layer board (with 5505mm pad on all layers)
5.0
4.5
4.0
3.5
3.0
2.5
④ 4.56W
③ 2.06W
①
②
③
④
IC Only
Θ j-a = 328.9 ℃ /W
IC mounted on 1-layer board
2
Θ j-a = 142.0 ℃ /W
IC mounted on 4-layer board
2 2
Θ j-a = 60.7 ℃ /W
Θ j-a = 27.4 ℃ /W
2
2.0
1.5
1.0
0.5
0.0
② 0.88W
① 0.38W
0
25
50
75
100
125
150
Ambient Temperature: Ta ( ℃ )
VQFN032V5050
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
16/17
2010.10- Rev.A
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