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参数资料
| 型号： | BF1100 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1100<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,; |
| 文件页数： | 4/15页 |
| 文件大小： | 311K |
| 代理商： | BF1100 |
NXP
Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on a printed-circuit board.
T
s
is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
Notes
1.
2.
R
G1
connects gate 1 to V
GG
= 9 V; see Fig.27.
R
G1
connects gate 1 to V
GG
= 12 V; see Fig.27.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
BF1100
BF1100R
thermal resistance from junction to soldering point
BF1100
BF1100R
note 1
500
550
K/W
K/W
R
th j-s
note 2
T
s
= 92
°
C
T
s
= 78
°
C
290
360
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
V
G2-S
= V
DS
= 0; I
G1-S
= 1 mA
V
G1-S
= V
DS
= 0; I
G2-S
= 1 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
G2-S
= 4 V; V
DS
= 9 V;
I
D
= 20
μ
A
V
G2-S
= 4 V; V
DS
= 12 V;
I
D
= 20
μ
A
V
G1-S
= 4 V; V
DS
= 9 V;
I
D
= 20
μ
A
V
G1-S
= 4 V; V
DS
= 12 V;
I
D
= 20
μ
A
V
G2-S
= 4 V; V
DS
= 9 V;
R
G1
= 180 k
; note 1
V
G2-S
= 4 V; V
DS
= 12 V;
R
G1
= 250 k
; note 2
V
G2-S
= V
DS
= 0; V
G1-S
= 12 V
V
G1-S
= V
DS
= 0; V
G2-S
= 12 V
13.2
13.2
0.5
0.5
0.3
20
20
1.5
1.5
1
V
V
V
V
V
0.3
1
V
V
G2-S(th)
gate 2-source threshold voltage
0.3
1.2
V
0.3
1.2
V
I
DSX
drain-source current
8
13
mA
8
13
mA
I
G1-SS
I
G2-SS
gate 1 cut-off current
gate 2 cut-off current
50
50
nA
nA
Rev. 02 - 13 November 2007
4 of 15
相关PDF资料 |
PDF描述 |
|---|---|
| BF1100 | N-channel dual-gate MOSFET |
| BF1100R | N-channel dual-gate MOSFET |
| BF1100R | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1100,215 | 功能描述:射频MOSFET小信号晶体管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1100/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Dual-Gate MOS-FETs |
| BF1100/WR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Dual-Gate MOS-FETs |
| BF1100R | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual-gate MOS-FETs |
| BF1100R,215 | 功能描述:射频MOSFET小信号晶体管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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